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Electrical properties of individual single-crystalline gallium phosphide nanowires with an outer oxide shell.

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Title: Electrical properties of individual single-crystalline gallium phosphide nanowires with an outer oxide shell.
Authors: Kim, Jae-Ryoung, Kim, Byoung-Kye, Lee, Jeong-O, Kim, Jinhee, Seo, Han Jong, Lee, Cheol Jin, Kim, Ju-Jin
Source: Nanotechnology. Nov2004, Vol. 15 Issue 11, p1397-1400. 4p.
Subjects: Gallium, Phosphides, Nanowires, Electric wire
Abstract: High-quality single-crystalline GaP nanowires were grown by a simple vapour deposition method and their electrical and opto-electric transport properties were studied. Structural studies showed that the GaP nanowires consisted of a core–shell structure with a single-crystalline GaP core and an outer gallium oxide (GaOx) layer of thickness [inline image] nm. The individual GaP nanowires exhibited n-type field effects with an on/off ratio as high as 105 and their carrier mobilities are in the range of about 10–22 cm2 V-1 s-1 at room temperature. When the devices were exposed to an ultraviolet (UV) light source, the current in the nanowires increased abruptly to more than 103 times, and this was possibly due to carrier generation in the nanowires and de-adsorption of adsorbed O2- ions on the GaOx surface shell. The nanowires also showed good reversible switching actions between the high- and low-resistance states. [ABSTRACT FROM AUTHOR]
Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 14985848
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  Data: Electrical properties of individual single-crystalline gallium phosphide nanowires with an outer oxide shell.
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  Data: <searchLink fieldCode="AR" term="%22Kim%2C+Jae-Ryoung%22">Kim, Jae-Ryoung</searchLink><br /><searchLink fieldCode="AR" term="%22Kim%2C+Byoung-Kye%22">Kim, Byoung-Kye</searchLink><br /><searchLink fieldCode="AR" term="%22Lee%2C+Jeong-O%22">Lee, Jeong-O</searchLink><br /><searchLink fieldCode="AR" term="%22Kim%2C+Jinhee%22">Kim, Jinhee</searchLink><br /><searchLink fieldCode="AR" term="%22Seo%2C+Han+Jong%22">Seo, Han Jong</searchLink><br /><searchLink fieldCode="AR" term="%22Lee%2C+Cheol+Jin%22">Lee, Cheol Jin</searchLink><br /><searchLink fieldCode="AR" term="%22Kim%2C+Ju-Jin%22">Kim, Ju-Jin</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Nanotechnology%22">Nanotechnology</searchLink>. Nov2004, Vol. 15 Issue 11, p1397-1400. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Gallium%22">Gallium</searchLink><br /><searchLink fieldCode="DE" term="%22Phosphides%22">Phosphides</searchLink><br /><searchLink fieldCode="DE" term="%22Nanowires%22">Nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+wire%22">Electric wire</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: High-quality single-crystalline GaP nanowires were grown by a simple vapour deposition method and their electrical and opto-electric transport properties were studied. Structural studies showed that the GaP nanowires consisted of a core–shell structure with a single-crystalline GaP core and an outer gallium oxide (GaOx) layer of thickness [inline image] nm. The individual GaP nanowires exhibited n-type field effects with an on/off ratio as high as 105 and their carrier mobilities are in the range of about 10–22 cm2 V-1 s-1 at room temperature. When the devices were exposed to an ultraviolet (UV) light source, the current in the nanowires increased abruptly to more than 103 times, and this was possibly due to carrier generation in the nanowires and de-adsorption of adsorbed O2- ions on the GaOx surface shell. The nanowires also showed good reversible switching actions between the high- and low-resistance states. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1088/0957-4484/15/11/002
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      – Code: eng
        Text: English
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        PageCount: 4
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      – SubjectFull: Phosphides
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              Text: Nov2004
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