APA (7th ed.) Citation

Zhang, Z., Yang, N., Lu, M., Yuan, X., Ye, X., Liu, C., & Li, H. (2021). Promotion of boron diffusion and gettering by employing thin Al2O3 layer as a reaction barrier. Journal of Materials Science: Materials in Electronics, 32(7), 8205. https://doi.org/10.1007/s10854-020-05124-6

Chicago Style (17th ed.) Citation

Zhang, Zhen, Ning Yang, Minglei Lu, Xiao Yuan, Xiaojun Ye, Cui Liu, and Hongbo Li. "Promotion of Boron Diffusion and Gettering by Employing Thin Al2O3 Layer as a Reaction Barrier." Journal of Materials Science: Materials in Electronics 32, no. 7 (2021): 8205. https://doi.org/10.1007/s10854-020-05124-6.

MLA (9th ed.) Citation

Zhang, Zhen, et al. "Promotion of Boron Diffusion and Gettering by Employing Thin Al2O3 Layer as a Reaction Barrier." Journal of Materials Science: Materials in Electronics, vol. 32, no. 7, 2021, p. 8205, https://doi.org/10.1007/s10854-020-05124-6.