Bibliographic Details
| Title: |
TiOx-based self-rectifying memory device for crossbar WORM memory array applications. |
| Authors: |
Fu, Li-Ping (AUTHOR), Song, Xiao-Qiang (AUTHOR), Gao, Xiao-Ping (AUTHOR) xp.gao@gsas.ac.cn, Wu, Ze-Wei (AUTHOR), Chen, Si-Kai (AUTHOR), Li, Ying-Tao (AUTHOR) li_yt06@lzu.edu.cn |
| Source: |
Chinese Physics B. Jan2021, Vol. 30 Issue 1, p1-4. 4p. |
| Subjects: |
Computer storage devices, Ohmic contacts, Worms, Memory, Random access memory |
| Abstract: |
Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiOx/W structure with self-rectifying property is demonstrated for write-once-read-many-times (WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state (LRS) permanently with a rectification ratio as high as 104 at ± 1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiOx/W interface and the Schottky contact at Pt/TiOx interface. The results in this paper demonstrate the potential application of TiOx-based WORM memory device in crossbar arrays. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
