View in EDS

TiOx-based self-rectifying memory device for crossbar WORM memory array applications.

Saved in:
Bibliographic Details
Title: TiOx-based self-rectifying memory device for crossbar WORM memory array applications.
Authors: Fu, Li-Ping (AUTHOR), Song, Xiao-Qiang (AUTHOR), Gao, Xiao-Ping (AUTHOR) xp.gao@gsas.ac.cn, Wu, Ze-Wei (AUTHOR), Chen, Si-Kai (AUTHOR), Li, Ying-Tao (AUTHOR) li_yt06@lzu.edu.cn
Source: Chinese Physics B. Jan2021, Vol. 30 Issue 1, p1-4. 4p.
Subjects: Computer storage devices, Ohmic contacts, Worms, Memory, Random access memory
Abstract: Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiOx/W structure with self-rectifying property is demonstrated for write-once-read-many-times (WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state (LRS) permanently with a rectification ratio as high as 104 at ± 1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiOx/W interface and the Schottky contact at Pt/TiOx interface. The results in this paper demonstrate the potential application of TiOx-based WORM memory device in crossbar arrays. [ABSTRACT FROM AUTHOR]
Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 150205270
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: TiO<subscript>x</subscript>-based self-rectifying memory device for crossbar WORM memory array applications.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Fu%2C+Li-Ping%22">Fu, Li-Ping</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Song%2C+Xiao-Qiang%22">Song, Xiao-Qiang</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gao%2C+Xiao-Ping%22">Gao, Xiao-Ping</searchLink> (AUTHOR)<i> xp.gao@gsas.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Wu%2C+Ze-Wei%22">Wu, Ze-Wei</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Si-Kai%22">Chen, Si-Kai</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Ying-Tao%22">Li, Ying-Tao</searchLink> (AUTHOR)<i> li_yt06@lzu.edu.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Chinese+Physics+B%22">Chinese Physics B</searchLink>. Jan2021, Vol. 30 Issue 1, p1-4. 4p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Computer+storage+devices%22">Computer storage devices</searchLink><br /><searchLink fieldCode="DE" term="%22Ohmic+contacts%22">Ohmic contacts</searchLink><br /><searchLink fieldCode="DE" term="%22Worms%22">Worms</searchLink><br /><searchLink fieldCode="DE" term="%22Memory%22">Memory</searchLink><br /><searchLink fieldCode="DE" term="%22Random+access+memory%22">Random access memory</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiOx/W structure with self-rectifying property is demonstrated for write-once-read-many-times (WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state (LRS) permanently with a rectification ratio as high as 104 at ± 1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiOx/W interface and the Schottky contact at Pt/TiOx interface. The results in this paper demonstrate the potential application of TiOx-based WORM memory device in crossbar arrays. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=150205270
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1088/1674-1056/abc548
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 4
        StartPage: 1
    Subjects:
      – SubjectFull: Computer storage devices
        Type: general
      – SubjectFull: Ohmic contacts
        Type: general
      – SubjectFull: Worms
        Type: general
      – SubjectFull: Memory
        Type: general
      – SubjectFull: Random access memory
        Type: general
    Titles:
      – TitleFull: TiOx-based self-rectifying memory device for crossbar WORM memory array applications.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Fu, Li-Ping
      – PersonEntity:
          Name:
            NameFull: Song, Xiao-Qiang
      – PersonEntity:
          Name:
            NameFull: Gao, Xiao-Ping
      – PersonEntity:
          Name:
            NameFull: Wu, Ze-Wei
      – PersonEntity:
          Name:
            NameFull: Chen, Si-Kai
      – PersonEntity:
          Name:
            NameFull: Li, Ying-Tao
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: Jan2021
              Type: published
              Y: 2021
          Identifiers:
            – Type: issn-print
              Value: 16741056
          Numbering:
            – Type: volume
              Value: 30
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Chinese Physics B
              Type: main
ResultId 1