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Deposition and Characterization of RP-ALD SiO 2 Thin Films with Different Oxygen Plasma Powers.

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Title: Deposition and Characterization of RP-ALD SiO 2 Thin Films with Different Oxygen Plasma Powers.
Authors: Zhang, Xiao-Ying1,2 (AUTHOR) xyzhang@xmut.edu.cn, Yang, Yue1 (AUTHOR) 1922031005@stu.xmut.edu.cn, Zhang, Zhi-Xuan1 (AUTHOR) 1922031023@stu.xmut.edu.cn, Geng, Xin-Peng1 (AUTHOR) 1922031048@stu.xmut.edu.cn, Hsu, Chia-Hsun1 (AUTHOR) chhsu@xmut.edu.cn, Wu, Wan-Yu3 (AUTHOR) wywu@mail.dyu.edu.tw, Lien, Shui-Yang1,2,3 (AUTHOR) sylien@xmut.edu.cn, Zhu, Wen-Zhang1,2 (AUTHOR), Pohl, Pawel (AUTHOR)
Source: Nanomaterials (2079-4991). May2021, Vol. 11 Issue 5, p1173. 1p.
Subjects: Oxygen plasmas, Thin films, Atomic layer deposition, Atomic force microscopes, Contact angle, Silane, Bismuth
Abstract: In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Deposition and Characterization of RP-ALD SiO 2 Thin Films with Different Oxygen Plasma Powers.
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  Data: <searchLink fieldCode="AR" term="%22Zhang%2C+Xiao-Ying%22">Zhang, Xiao-Ying</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> xyzhang@xmut.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Yang%2C+Yue%22">Yang, Yue</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> 1922031005@stu.xmut.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Zhi-Xuan%22">Zhang, Zhi-Xuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> 1922031023@stu.xmut.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Geng%2C+Xin-Peng%22">Geng, Xin-Peng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> 1922031048@stu.xmut.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Hsu%2C+Chia-Hsun%22">Hsu, Chia-Hsun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> chhsu@xmut.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wu%2C+Wan-Yu%22">Wu, Wan-Yu</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> wywu@mail.dyu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Lien%2C+Shui-Yang%22">Lien, Shui-Yang</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> sylien@xmut.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Zhu%2C+Wen-Zhang%22">Zhu, Wen-Zhang</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pohl%2C+Pawel%22">Pohl, Pawel</searchLink> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. May2021, Vol. 11 Issue 5, p1173. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Oxygen+plasmas%22">Oxygen plasmas</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+layer+deposition%22">Atomic layer deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+force+microscopes%22">Atomic force microscopes</searchLink><br /><searchLink fieldCode="DE" term="%22Contact+angle%22">Contact angle</searchLink><br /><searchLink fieldCode="DE" term="%22Silane%22">Silane</searchLink><br /><searchLink fieldCode="DE" term="%22Bismuth%22">Bismuth</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano11051173
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      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: 1173
    Subjects:
      – SubjectFull: Oxygen plasmas
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Atomic layer deposition
        Type: general
      – SubjectFull: Atomic force microscopes
        Type: general
      – SubjectFull: Contact angle
        Type: general
      – SubjectFull: Silane
        Type: general
      – SubjectFull: Bismuth
        Type: general
    Titles:
      – TitleFull: Deposition and Characterization of RP-ALD SiO 2 Thin Films with Different Oxygen Plasma Powers.
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              Text: May2021
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