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Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system.

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Title: Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system.
Authors: Gonzales, Karl Cedric1,2 (AUTHOR) gonzalek@uji.es, Prieto, Elizabeth Ann1,3 (AUTHOR) eapprieto@msep.upd.edu.ph, Catindig, Gerald Angelo1 (AUTHOR), De Los Reyes, Alexander1 (AUTHOR), Faustino, Maria Angela3 (AUTHOR), Tumanguil-Quitoras, Mae Agatha3 (AUTHOR), Husay, Horace Andrew1 (AUTHOR), Vasquez, John Daniel3 (AUTHOR), Somintac, Armando1 (AUTHOR), Estacio, Elmer1 (AUTHOR), Salvador, Arnel1 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. May2021, Vol. 32 Issue 10, p13825-13836. 12p.
Subjects: Molecular beam epitaxy, Reflection high energy electron diffraction, Auditing standards, Antiphase boundaries
Abstract: Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. The GaAs epilayers are grown by molecular beam epitaxy on exactly oriented Si (100) substrates at three different temperatures (Ts = 320 °C, 520 °C and 630 °C). The growth method involves the deposition of two low-temperature-grown (LTG)-GaAs buffers with subsequent in-situ thermal annealing at Ts = 600 °C. Reflection high energy electron diffraction confirms the layer-by-layer growth mode of the GaAs on Si. X-ray diffraction shows the improvement in crystallinity as growth temperature is increased. The THz time-domain spectroscopy is performed in reflection and transmission excitation geometries. At Ts = 320 °C, the low crystallinity of GaAs on Si makes it an inferior THz emitter in reflection geometry, over a GaAs grown at the same temperature on a semi-insulating GaAs substrate. However, in transmission geometry, the GaAs on Si exhibits less absorption losses. At higher Ts, the GaAs on Si thin films emerge as promising THz emitters despite the presence of antiphase boundaries and threading dislocations as identified from scanning electron microscopy and Raman spectroscopy. An intense THz emission in reflection and transmission excitation geometries is observed for the GaAs on Si grown at Ts = 520 °C, suggesting the existence of an optimal growth temperature for GaAs on Si at which the THz emission is most efficient in both excitation geometries. The results are significant in the growth design and fabrication of GaAs on Si material system intended for future THz photoconductive antenna emitter devices. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. May2021, Vol. 32 Issue 10, p13825-13836. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Reflection+high+energy+electron+diffraction%22">Reflection high energy electron diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Auditing+standards%22">Auditing standards</searchLink><br /><searchLink fieldCode="DE" term="%22Antiphase+boundaries%22">Antiphase boundaries</searchLink>
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  Data: Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. The GaAs epilayers are grown by molecular beam epitaxy on exactly oriented Si (100) substrates at three different temperatures (Ts = 320 °C, 520 °C and 630 °C). The growth method involves the deposition of two low-temperature-grown (LTG)-GaAs buffers with subsequent in-situ thermal annealing at Ts = 600 °C. Reflection high energy electron diffraction confirms the layer-by-layer growth mode of the GaAs on Si. X-ray diffraction shows the improvement in crystallinity as growth temperature is increased. The THz time-domain spectroscopy is performed in reflection and transmission excitation geometries. At Ts = 320 °C, the low crystallinity of GaAs on Si makes it an inferior THz emitter in reflection geometry, over a GaAs grown at the same temperature on a semi-insulating GaAs substrate. However, in transmission geometry, the GaAs on Si exhibits less absorption losses. At higher Ts, the GaAs on Si thin films emerge as promising THz emitters despite the presence of antiphase boundaries and threading dislocations as identified from scanning electron microscopy and Raman spectroscopy. An intense THz emission in reflection and transmission excitation geometries is observed for the GaAs on Si grown at Ts = 520 °C, suggesting the existence of an optimal growth temperature for GaAs on Si at which the THz emission is most efficient in both excitation geometries. The results are significant in the growth design and fabrication of GaAs on Si material system intended for future THz photoconductive antenna emitter devices. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s10854-021-05958-8
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