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Point Defect Model Description of the Formation of Anodic Gold Oxide in H2SO4 Solution.

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Title: Point Defect Model Description of the Formation of Anodic Gold Oxide in H2SO4 Solution.
Authors: Ghelichkhah, Zahed1, Ferguson, Gregory S.1 gf03@lehigh.edu, Macdonald, Digby D.2 macdonald@berkeley.edu, Asl, Samin Sharifi-2
Source: Journal of The Electrochemical Society. Apr2021, Vol. 168 Issue 4, p1-24. 24p.
Subjects: Point defects, Oxides, Gold, Refractive index, Product management software
Abstract: An impedance-based Point Defect Model (PDM) was developed for the potentiostatic, anodic formation of gold oxide at potentials of 1.40–1.70 V vs SHE in H2SO4 (0.1 M and 0.5 M). Film thickness and refractive indices were determined at each oxide formation potential using spectroscopic ellipsometry. The thickness of the oxide increases linearly with increasing potential. Mott-Schottky analysis shows that the oxide exhibits both n-type and p-type character and the dominant defect density is calculated to be in the order of 1021−1022 (1 cm−3). The PDM was optimized upon experimental EIS data to extract values for model parameters and accounts well for the experimental observations in both the steady-state time and frequency domains. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:An impedance-based Point Defect Model (PDM) was developed for the potentiostatic, anodic formation of gold oxide at potentials of 1.40–1.70 V vs SHE in H2SO4 (0.1 M and 0.5 M). Film thickness and refractive indices were determined at each oxide formation potential using spectroscopic ellipsometry. The thickness of the oxide increases linearly with increasing potential. Mott-Schottky analysis shows that the oxide exhibits both n-type and p-type character and the dominant defect density is calculated to be in the order of 1021−1022 (1 cm−3). The PDM was optimized upon experimental EIS data to extract values for model parameters and accounts well for the experimental observations in both the steady-state time and frequency domains. [ABSTRACT FROM AUTHOR]
ISSN:00134651
DOI:10.1149/1945-7111/abf409