Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects.
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| Title: | Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects. |
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| Authors: | Jau-Shiung Fang1 jsfang@nfu.edu.tw, Yu-Lin Wu1, Yi-Lung Cheng2, Giin-Shan Chen3 |
| Source: | Journal of The Electrochemical Society. Apr2021, Vol. 168 Issue 4, p1-8. 8p. |
| Subjects: | Nanoelectromechanical systems, Nanostructured materials, Electrical resistivity, Alloys, Chronoamperometry, Cobalt |
| Abstract: | Nanoscale cobalt interconnection wire has a lower mean free path of electrons to reduce the electrical resistivity, therefore it has been increasingly studied as a promising interconnect material to replace the conventionally used copper in state-of-the-art nanoscale devices. This process further limits the space for barrier/seed layer deposition to conformally fill the narrow trenches/ contact holes in nanoscale devices. Thus, an electrochemical approach not involving a conventional high-resistivity barrier is presented to study the gap-filling capability and properties of Co(P) films with a controlled composition on a NiSi substrate. Examining electrodeposited Co(P) films reveals that the composition is determined mainly by the deposition potential instead of the amount of NaH2PO2 in the electrolytes, yielding a film with a phosphorous concentration lower than 2.62 at.%. The lightly doped Co(P) film has an hexagonal close-packed Co structure with phosphorous atoms at the interstitial lattice site. A chronoamperometry study on the current transient during the electrochemical deposition indicates that NaH2PO2 addition can enhance the deposition of the Co(P) films. Hence, the Co(P) film developed here is capable of gap filling nanoscale trenches up to an aspect ratio of 5 and is practical as a contact plug material for NiSi in nanoscale devices. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 150654503 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Jau-Shiung+Fang%22">Jau-Shiung Fang</searchLink><relatesTo>1</relatesTo><i> jsfang@nfu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Yu-Lin+Wu%22">Yu-Lin Wu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yi-Lung+Cheng%22">Yi-Lung Cheng</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Giin-Shan+Chen%22">Giin-Shan Chen</searchLink><relatesTo>3</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+The+Electrochemical+Society%22">Journal of The Electrochemical Society</searchLink>. Apr2021, Vol. 168 Issue 4, p1-8. 8p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Nanoelectromechanical+systems%22">Nanoelectromechanical systems</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructured+materials%22">Nanostructured materials</searchLink><br /><searchLink fieldCode="DE" term="%22Electrical+resistivity%22">Electrical resistivity</searchLink><br /><searchLink fieldCode="DE" term="%22Alloys%22">Alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Chronoamperometry%22">Chronoamperometry</searchLink><br /><searchLink fieldCode="DE" term="%22Cobalt%22">Cobalt</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Nanoscale cobalt interconnection wire has a lower mean free path of electrons to reduce the electrical resistivity, therefore it has been increasingly studied as a promising interconnect material to replace the conventionally used copper in state-of-the-art nanoscale devices. This process further limits the space for barrier/seed layer deposition to conformally fill the narrow trenches/ contact holes in nanoscale devices. Thus, an electrochemical approach not involving a conventional high-resistivity barrier is presented to study the gap-filling capability and properties of Co(P) films with a controlled composition on a NiSi substrate. Examining electrodeposited Co(P) films reveals that the composition is determined mainly by the deposition potential instead of the amount of NaH2PO2 in the electrolytes, yielding a film with a phosphorous concentration lower than 2.62 at.%. The lightly doped Co(P) film has an hexagonal close-packed Co structure with phosphorous atoms at the interstitial lattice site. A chronoamperometry study on the current transient during the electrochemical deposition indicates that NaH2PO2 addition can enhance the deposition of the Co(P) films. Hence, the Co(P) film developed here is capable of gap filling nanoscale trenches up to an aspect ratio of 5 and is practical as a contact plug material for NiSi in nanoscale devices. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1149/1945-7111/abf309 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 1 Subjects: – SubjectFull: Nanoelectromechanical systems Type: general – SubjectFull: Nanostructured materials Type: general – SubjectFull: Electrical resistivity Type: general – SubjectFull: Alloys Type: general – SubjectFull: Chronoamperometry Type: general – SubjectFull: Cobalt Type: general Titles: – TitleFull: Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Jau-Shiung Fang – PersonEntity: Name: NameFull: Yu-Lin Wu – PersonEntity: Name: NameFull: Yi-Lung Cheng – PersonEntity: Name: NameFull: Giin-Shan Chen IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2021 Type: published Y: 2021 Identifiers: – Type: issn-print Value: 00134651 Numbering: – Type: volume Value: 168 – Type: issue Value: 4 Titles: – TitleFull: Journal of The Electrochemical Society Type: main |
| ResultId | 1 |
