Improved temperature coefficient of resistance and transport properties of Nd0.7Sr0.3−xAxMnO3 (A = Ag, Na, K: x = 0 & 0.1) manganites.
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| Title: | Improved temperature coefficient of resistance and transport properties of Nd |
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| Authors: | Modi, Anchit1 (AUTHOR) anchitmodi87@gmail.com, Pandey, Devendra K.1 (AUTHOR), Bhattacharya, Shovit2 (AUTHOR), Mukherjee, Sudip3 (AUTHOR), Okram, G. S.4 (AUTHOR), Gaur, N. K.1 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. Sep2021, Vol. 32 Issue 18, p23134-23145. 12p. |
| Subjects: | Temperature coefficient of electric resistance, Metal-insulator transitions, Rietveld refinement, Transition metals, Space groups, Transition temperature |
| Abstract: | We have investigated the structural, magneto-resistive, electrical, and thermal transport properties of monovalent substituted polycrystalline Nd0.7Sr0.3−xAxMnO3 (x = 0, 0.1 and A = Na, Ag, K) compounds. The Rietveld refinement of the X-ray diffraction patterns reveals that all samples crystallize in orthorhombic structure with Pnma space group. The scanning electron microscopy micrographs evidenced that the grains acquire uniform morphology, nearly spherical, and unequal grains in all the studied samples. The decrease in metal-insulator transition temperature on the monovalent substitution is a result of reduced double-exchange interactions. Further, above the metal-insulator transition, electrical transport properties are analyzed through variable range hopping and small polaron hopping models. The substitution of monovalent cations enhanced the experimental parameters like hopping distance and activation energy, while the density of state at the Fermi level decreased significantly. On the monovalent doping, the samples showed very high magnetoresistance (MR%), and the temperature coefficient of resistance (TCR%) makes them prospective candidates for advanced uncooled infrared bolometers. The thermoelectric power (S) demonstrates a positive to a negative crossover, and the value of S increased in doped samples. At the higher temperatures, the small polaron is responsible for the conduction process. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 152424082 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Improved temperature coefficient of resistance and transport properties of Nd<subscript>0.7</subscript>Sr<subscript>0.3−x</subscript>A<subscript>x</subscript>MnO<subscript>3</subscript> (A = Ag, Na, K: x = 0 & 0.1) manganites. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Modi%2C+Anchit%22">Modi, Anchit</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> anchitmodi87@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Pandey%2C+Devendra+K%2E%22">Pandey, Devendra K.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bhattacharya%2C+Shovit%22">Bhattacharya, Shovit</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mukherjee%2C+Sudip%22">Mukherjee, Sudip</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Okram%2C+G%2E+S%2E%22">Okram, G. S.</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gaur%2C+N%2E+K%2E%22">Gaur, N. K.</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Sep2021, Vol. 32 Issue 18, p23134-23145. 12p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Temperature+coefficient+of+electric+resistance%22">Temperature coefficient of electric resistance</searchLink><br /><searchLink fieldCode="DE" term="%22Metal-insulator+transitions%22">Metal-insulator transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Rietveld+refinement%22">Rietveld refinement</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+metals%22">Transition metals</searchLink><br /><searchLink fieldCode="DE" term="%22Space+groups%22">Space groups</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+temperature%22">Transition temperature</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: We have investigated the structural, magneto-resistive, electrical, and thermal transport properties of monovalent substituted polycrystalline Nd0.7Sr0.3−xAxMnO3 (x = 0, 0.1 and A = Na, Ag, K) compounds. The Rietveld refinement of the X-ray diffraction patterns reveals that all samples crystallize in orthorhombic structure with Pnma space group. The scanning electron microscopy micrographs evidenced that the grains acquire uniform morphology, nearly spherical, and unequal grains in all the studied samples. The decrease in metal-insulator transition temperature on the monovalent substitution is a result of reduced double-exchange interactions. Further, above the metal-insulator transition, electrical transport properties are analyzed through variable range hopping and small polaron hopping models. The substitution of monovalent cations enhanced the experimental parameters like hopping distance and activation energy, while the density of state at the Fermi level decreased significantly. On the monovalent doping, the samples showed very high magnetoresistance (MR%), and the temperature coefficient of resistance (TCR%) makes them prospective candidates for advanced uncooled infrared bolometers. The thermoelectric power (S) demonstrates a positive to a negative crossover, and the value of S increased in doped samples. At the higher temperatures, the small polaron is responsible for the conduction process. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-021-06799-1 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 23134 Subjects: – SubjectFull: Temperature coefficient of electric resistance Type: general – SubjectFull: Metal-insulator transitions Type: general – SubjectFull: Rietveld refinement Type: general – SubjectFull: Transition metals Type: general – SubjectFull: Space groups Type: general – SubjectFull: Transition temperature Type: general Titles: – TitleFull: Improved temperature coefficient of resistance and transport properties of Nd0.7Sr0.3−xAxMnO3 (A = Ag, Na, K: x = 0 & 0.1) manganites. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Modi, Anchit – PersonEntity: Name: NameFull: Pandey, Devendra K. – PersonEntity: Name: NameFull: Bhattacharya, Shovit – PersonEntity: Name: NameFull: Mukherjee, Sudip – PersonEntity: Name: NameFull: Okram, G. S. – PersonEntity: Name: NameFull: Gaur, N. K. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 09 Text: Sep2021 Type: published Y: 2021 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 32 – Type: issue Value: 18 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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