A new penternary semiconductor Cu2CoSn(SSe)4 nanocrystal: a study on structural, dielectric and optical properties.
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| Title: | A new penternary semiconductor Cu |
|---|---|
| Authors: | Akın, Ü.1 (AUTHOR), Özel, F.2 (AUTHOR), Sarılmaz, A.2 (AUTHOR), Yüksel, Ö. F.1 (AUTHOR), Tuğluoğlu, N.3 (AUTHOR) tugluo@gmail.com |
| Source: | Journal of Materials Science: Materials in Electronics. Nov2021, Vol. 32 Issue 22, p26641-26654. 14p. |
| Subjects: | Dielectric properties, Optical properties, Optical dispersion, Dye-sensitized solar cells, Dielectric loss, Nanocrystals |
| Abstract: | In recent years, the penternary nanocrystals synthesized as an alternative to Pt in dye-sensitized solar cells have attracted the attention of researchers due to their many important properties such as low-cost elemental component, high absorption coefficient, optimal optical band gap, high efficiency and environmental stability. Because of these attractive features, a new penternary chalcogenide semiconductor, namely Cu2CoSn(SSe)4 (CCTSSe), have been synthesized by hot-injection technique and its structural, dielectrical and optical dispersion characteristics have been reported. CCTSSe nanostructure films were produced by spin-coating method onto glass substrates. The optical, morphological, compositional and structural properties of this penternary chalcogenide semiconductor was characterized by ultraviolet–visible-near (UV–VIS-NIR) spectroscopy, energy-dispersive spectrometer (EDS), Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The CCTSSe penternary nanostructure has a band gap energy of 1.186 eV, single crystalline, adequate stoichiometric ratio, kesterite phase and 10–20 nm particle sizes which are forming nanospheres. The optical dispersion and dielectric characteristics were investigated based on the reflectance and transmittance spectra measured by spectrophotometer between 200 and 2000 nm. The value of extinction coefficient and refractive index were estimated, and a relation between the optical band gap values and the refractive index values was debated. The values of oscillator energy and dispersion energy were determined by the single oscillator of the Wemple–DiDomenico method. The loss tangent and the dielectric constants were evaluated. The obtained results report the capability of the high-efficiency and low-cost CCTSSe thin films in photonic and photovoltaic applications, especially in dye-sensitized solar cells. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Items | – Name: Title Label: Title Group: Ti Data: A new penternary semiconductor Cu<subscript>2</subscript>CoSn(SSe)<subscript>4</subscript> nanocrystal: a study on structural, dielectric and optical properties. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Akın%2C+Ü%2E%22">Akın, Ü.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Özel%2C+F%2E%22">Özel, F.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sarılmaz%2C+A%2E%22">Sarılmaz, A.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yüksel%2C+Ö%2E+F%2E%22">Yüksel, Ö. F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tuğluoğlu%2C+N%2E%22">Tuğluoğlu, N.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> tugluo@gmail.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Nov2021, Vol. 32 Issue 22, p26641-26654. 14p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Dielectric+properties%22">Dielectric properties</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+dispersion%22">Optical dispersion</searchLink><br /><searchLink fieldCode="DE" term="%22Dye-sensitized+solar+cells%22">Dye-sensitized solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+loss%22">Dielectric loss</searchLink><br /><searchLink fieldCode="DE" term="%22Nanocrystals%22">Nanocrystals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In recent years, the penternary nanocrystals synthesized as an alternative to Pt in dye-sensitized solar cells have attracted the attention of researchers due to their many important properties such as low-cost elemental component, high absorption coefficient, optimal optical band gap, high efficiency and environmental stability. Because of these attractive features, a new penternary chalcogenide semiconductor, namely Cu2CoSn(SSe)4 (CCTSSe), have been synthesized by hot-injection technique and its structural, dielectrical and optical dispersion characteristics have been reported. CCTSSe nanostructure films were produced by spin-coating method onto glass substrates. The optical, morphological, compositional and structural properties of this penternary chalcogenide semiconductor was characterized by ultraviolet–visible-near (UV–VIS-NIR) spectroscopy, energy-dispersive spectrometer (EDS), Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The CCTSSe penternary nanostructure has a band gap energy of 1.186 eV, single crystalline, adequate stoichiometric ratio, kesterite phase and 10–20 nm particle sizes which are forming nanospheres. The optical dispersion and dielectric characteristics were investigated based on the reflectance and transmittance spectra measured by spectrophotometer between 200 and 2000 nm. The value of extinction coefficient and refractive index were estimated, and a relation between the optical band gap values and the refractive index values was debated. The values of oscillator energy and dispersion energy were determined by the single oscillator of the Wemple–DiDomenico method. The loss tangent and the dielectric constants were evaluated. The obtained results report the capability of the high-efficiency and low-cost CCTSSe thin films in photonic and photovoltaic applications, especially in dye-sensitized solar cells. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-021-07041-8 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 14 StartPage: 26641 Subjects: – SubjectFull: Dielectric properties Type: general – SubjectFull: Optical properties Type: general – SubjectFull: Optical dispersion Type: general – SubjectFull: Dye-sensitized solar cells Type: general – SubjectFull: Dielectric loss Type: general – SubjectFull: Nanocrystals Type: general Titles: – TitleFull: A new penternary semiconductor Cu2CoSn(SSe)4 nanocrystal: a study on structural, dielectric and optical properties. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Akın, Ü. – PersonEntity: Name: NameFull: Özel, F. – PersonEntity: Name: NameFull: Sarılmaz, A. – PersonEntity: Name: NameFull: Yüksel, Ö. F. – PersonEntity: Name: NameFull: Tuğluoğlu, N. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 11 Text: Nov2021 Type: published Y: 2021 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 32 – Type: issue Value: 22 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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