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Strain-tunable electronic and optical properties of h-BN/BC3 heterostructure with enhanced electron mobility.

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Title: Strain-tunable electronic and optical properties of h-BN/BC3 heterostructure with enhanced electron mobility.
Authors: Jiao, Zhao-Yong1 (AUTHOR), Wang, Yi-Ran1 (AUTHOR), Guo, Yong-Liang1,2 (AUTHOR), Ma, Shu-Hong1 (AUTHOR) mash.phy@htu.edu.cn
Source: Chinese Physics B. Jul2021, Vol. 30 Issue 7, p1-8. 8p.
Subjects: Optical properties, Electronic band structure, Electric field effects, Redshift, Optoelectronic devices, Electric fields
Abstract: By using first-principles calculation, we study the properties of h-BN/BC3 heterostructure and the effects of external electric fields and strains on its electronic and optical properties. It is found that the semiconducting h-BN/BC3 has good dynamical stability and ultrahigh stiffness, enhanced electron mobility, and well-preserved electronic band structure as the BC3 monolayer. Meanwhile, its electronic band structure is slightly modified by an external electric field. In contrast, applying an external strain can mildly modulate the electronic band structure of h-BN/BC3 and the optical property exhibits an apparent redshift under a compressive strain relative to the pristine one. These findings show that the h-BN/BC3 hybrid can be designed as optoelectronic device with moderately strain-tunable electronic and optical properties. [ABSTRACT FROM AUTHOR]
Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 153409868
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Strain-tunable electronic and optical properties of h-BN/BC<subscript>3</subscript> heterostructure with enhanced electron mobility.
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  Data: <searchLink fieldCode="JN" term="%22Chinese+Physics+B%22">Chinese Physics B</searchLink>. Jul2021, Vol. 30 Issue 7, p1-8. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+band+structure%22">Electronic band structure</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+field+effects%22">Electric field effects</searchLink><br /><searchLink fieldCode="DE" term="%22Redshift%22">Redshift</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronic+devices%22">Optoelectronic devices</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+fields%22">Electric fields</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: By using first-principles calculation, we study the properties of h-BN/BC3 heterostructure and the effects of external electric fields and strains on its electronic and optical properties. It is found that the semiconducting h-BN/BC3 has good dynamical stability and ultrahigh stiffness, enhanced electron mobility, and well-preserved electronic band structure as the BC3 monolayer. Meanwhile, its electronic band structure is slightly modified by an external electric field. In contrast, applying an external strain can mildly modulate the electronic band structure of h-BN/BC3 and the optical property exhibits an apparent redshift under a compressive strain relative to the pristine one. These findings show that the h-BN/BC3 hybrid can be designed as optoelectronic device with moderately strain-tunable electronic and optical properties. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1088/1674-1056/abe29d
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 8
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    Subjects:
      – SubjectFull: Optical properties
        Type: general
      – SubjectFull: Electronic band structure
        Type: general
      – SubjectFull: Electric field effects
        Type: general
      – SubjectFull: Redshift
        Type: general
      – SubjectFull: Optoelectronic devices
        Type: general
      – SubjectFull: Electric fields
        Type: general
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      – TitleFull: Strain-tunable electronic and optical properties of h-BN/BC3 heterostructure with enhanced electron mobility.
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            NameFull: Jiao, Zhao-Yong
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            NameFull: Wang, Yi-Ran
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            NameFull: Guo, Yong-Liang
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            NameFull: Ma, Shu-Hong
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            – D: 01
              M: 07
              Text: Jul2021
              Type: published
              Y: 2021
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            – TitleFull: Chinese Physics B
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