A 16-kb 9T Ultralow-Voltage SRAM With Column-Based Split Cell-VSS, Data-Aware Write-Assist, and Enhanced Read Sensing Margin in 28-nm FDSOI. - Siddiqui, M. Sultan M.; Lee, Zhao Chuan; Kim, Tony Tae-Hyoung (IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2021)