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Characterization and Analysis of Random Telegraph Noise in Scaled SiGe Channel HKMG pMOSFETs.

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Title: Characterization and Analysis of Random Telegraph Noise in Scaled SiGe Channel HKMG pMOSFETs.
Authors: Pavan, Ch. L. N.1 chlnpavan87@gmail.com, Divakaruni, Rama2, Chakravorty, Anjan1, Nair, Deleep R.1 deleep@ee.iitm.ac.in
Source: IEEE Transactions on Electron Devices. Feb2022, Vol. 69 Issue 2, p456-461. 6p.
Subjects: Random noise theory, Threshold voltage, Logic circuits
Abstract: Here for the first time, we report on the characterization and analysis of random telegraph noise (RTN) in silicon-germanium (SiGe) channel pMOSFETs without a silicon-cap layer. A detailed analysis of traps causing two-level RTN is presented. The trap parameters and RTN magnitude are computed. It was observed that the impact of RTN is similar when compared with silicon channel pFETs from a similar process node with a comparable ${T}_{\text{inv}}$. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Characterization and Analysis of Random Telegraph Noise in Scaled SiGe Channel HKMG pMOSFETs.
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>. Feb2022, Vol. 69 Issue 2, p456-461. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Random+noise+theory%22">Random noise theory</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Logic+circuits%22">Logic circuits</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Here for the first time, we report on the characterization and analysis of random telegraph noise (RTN) in silicon-germanium (SiGe) channel pMOSFETs without a silicon-cap layer. A detailed analysis of traps causing two-level RTN is presented. The trap parameters and RTN magnitude are computed. It was observed that the impact of RTN is similar when compared with silicon channel pFETs from a similar process node with a comparable ${T}_{\text{inv}}$. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TED.2021.3133203
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      – SubjectFull: Threshold voltage
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      – SubjectFull: Logic circuits
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      – TitleFull: Characterization and Analysis of Random Telegraph Noise in Scaled SiGe Channel HKMG pMOSFETs.
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              Text: Feb2022
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