Bibliographic Details
| Title: |
Characterization and Analysis of Random Telegraph Noise in Scaled SiGe Channel HKMG pMOSFETs. |
| Authors: |
Pavan, Ch. L. N.1 chlnpavan87@gmail.com, Divakaruni, Rama2, Chakravorty, Anjan1, Nair, Deleep R.1 deleep@ee.iitm.ac.in |
| Source: |
IEEE Transactions on Electron Devices. Feb2022, Vol. 69 Issue 2, p456-461. 6p. |
| Subjects: |
Random noise theory, Threshold voltage, Logic circuits |
| Abstract: |
Here for the first time, we report on the characterization and analysis of random telegraph noise (RTN) in silicon-germanium (SiGe) channel pMOSFETs without a silicon-cap layer. A detailed analysis of traps causing two-level RTN is presented. The trap parameters and RTN magnitude are computed. It was observed that the impact of RTN is similar when compared with silicon channel pFETs from a similar process node with a comparable ${T}_{\text{inv}}$. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
