APA (7th ed.) Citation

Al-Shameri, N. S., & Dakhlaoui, H. (2022). Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage. Physica B, 628, N.PAG. https://doi.org/10.1016/j.physb.2021.413555

Chicago Style (17th ed.) Citation

Al-Shameri, Najla S., and Hassen Dakhlaoui. "Numerical Investigation of Quantum Tunneling Time and Spin-current Density in GaAs/GaMnAs/GaAs Barriers: Role of an Applied Bias Voltage." Physica B 628 (2022): N.PAG. https://doi.org/10.1016/j.physb.2021.413555.

MLA (9th ed.) Citation

Al-Shameri, Najla S., and Hassen Dakhlaoui. "Numerical Investigation of Quantum Tunneling Time and Spin-current Density in GaAs/GaMnAs/GaAs Barriers: Role of an Applied Bias Voltage." Physica B, vol. 628, 2022, p. N.PAG, https://doi.org/10.1016/j.physb.2021.413555.