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Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage.

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Title: Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage.
Authors: Al-Shameri, Najla S.1,2 (AUTHOR), Dakhlaoui, Hassen1,2 (AUTHOR) hbaldkhlaen@iau.edu.sa
Source: Physica B. Mar2022, Vol. 628, pN.PAG-N.PAG. 1p.
Subjects: Gallium arsenide, Auditing standards, Tunnel design & construction, Voltage, Transfer matrix, Density
Abstract: In this paper, we have discussed theoretically the effect of an applied bias voltage and the temperature on the spin-tunneling time, spin-dependent polarization and current densities of holes in GaAs/GaMnAs double barriers using the transfer matrix method (TMM). The behavior of the transmission coefficients for different spin orientations (up and down), various applied voltages and different temperatures were calculated. Our findings indicate that the maxima of the spin-up transmission coefficient shift towards the lower energies by increasing the applied bias voltage. Furthermore, our structure is almost transparent for spin-down holes and presents some resonances for spin-up ones. In addition, we have found that the tunneling time decreases progressively by enhancing the applied voltage. It is also shown that the current densities of holes with both spin-up and down orientations present a negative differential resistance (NDR). This (NDR) resistance is more intense for spin-up holes than spin-down ones. Consequently, the obtained results pointed out that we can design and fabricate a high-speed spin-filters and diodes by fixing the appropriate values of applied voltages and temperatures. the asymmetry between the tunneling rates result in the formation of multiple regions with negative tunneling conductivity in the I–V curves. These regions containing an (NDR) effect are promising in the fabrication of single atoms transistors required in different applications in modern nanoelectronic circuits. [ABSTRACT FROM AUTHOR]
Copyright of Physica B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Al-Shameri%2C+Najla+S%2E%22">Al-Shameri, Najla S.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dakhlaoui%2C+Hassen%22">Dakhlaoui, Hassen</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> hbaldkhlaen@iau.edu.sa</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Physica+B%22">Physica B</searchLink>. Mar2022, Vol. 628, pN.PAG-N.PAG. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Gallium+arsenide%22">Gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Auditing+standards%22">Auditing standards</searchLink><br /><searchLink fieldCode="DE" term="%22Tunnel+design+%26+construction%22">Tunnel design & construction</searchLink><br /><searchLink fieldCode="DE" term="%22Voltage%22">Voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Transfer+matrix%22">Transfer matrix</searchLink><br /><searchLink fieldCode="DE" term="%22Density%22">Density</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this paper, we have discussed theoretically the effect of an applied bias voltage and the temperature on the spin-tunneling time, spin-dependent polarization and current densities of holes in GaAs/GaMnAs double barriers using the transfer matrix method (TMM). The behavior of the transmission coefficients for different spin orientations (up and down), various applied voltages and different temperatures were calculated. Our findings indicate that the maxima of the spin-up transmission coefficient shift towards the lower energies by increasing the applied bias voltage. Furthermore, our structure is almost transparent for spin-down holes and presents some resonances for spin-up ones. In addition, we have found that the tunneling time decreases progressively by enhancing the applied voltage. It is also shown that the current densities of holes with both spin-up and down orientations present a negative differential resistance (NDR). This (NDR) resistance is more intense for spin-up holes than spin-down ones. Consequently, the obtained results pointed out that we can design and fabricate a high-speed spin-filters and diodes by fixing the appropriate values of applied voltages and temperatures. the asymmetry between the tunneling rates result in the formation of multiple regions with negative tunneling conductivity in the I–V curves. These regions containing an (NDR) effect are promising in the fabrication of single atoms transistors required in different applications in modern nanoelectronic circuits. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Physica B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.physb.2021.413555
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Gallium arsenide
        Type: general
      – SubjectFull: Auditing standards
        Type: general
      – SubjectFull: Tunnel design & construction
        Type: general
      – SubjectFull: Voltage
        Type: general
      – SubjectFull: Transfer matrix
        Type: general
      – SubjectFull: Density
        Type: general
    Titles:
      – TitleFull: Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Al-Shameri, Najla S.
      – PersonEntity:
          Name:
            NameFull: Dakhlaoui, Hassen
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2022
              Type: published
              Y: 2022
          Identifiers:
            – Type: issn-print
              Value: 09214526
          Numbering:
            – Type: volume
              Value: 628
          Titles:
            – TitleFull: Physica B
              Type: main
ResultId 1