APA (7th ed.) Citation

Benrabah, S., Legallais, M., Besson, P., Ruel, S., Vauche, L., Pelissier, B., . . . Charles, M. (2022). H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces. Applied Surface Science, 582, N.PAG. https://doi.org/10.1016/j.apsusc.2021.152309

Chicago Style (17th ed.) Citation

Benrabah, Sabria, Maxime Legallais, Pascal Besson, Simon Ruel, Laura Vauche, Bernard Pelissier, Chloé Thieuleux, Bassem Salem, and Matthew Charles. "H3PO4-based Wet Chemical Etching for Recovery of Dry-etched GaN Surfaces." Applied Surface Science 582 (2022): N.PAG. https://doi.org/10.1016/j.apsusc.2021.152309.

MLA (9th ed.) Citation

Benrabah, Sabria, et al. "H3PO4-based Wet Chemical Etching for Recovery of Dry-etched GaN Surfaces." Applied Surface Science, vol. 582, 2022, p. N.PAG, https://doi.org/10.1016/j.apsusc.2021.152309.