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Multifunctional n-ZnO/MoO3/PEDOT:PSS-based hybrid device for high-speed UV light detection and ReRAM applications.

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Title: Multifunctional n-ZnO/MoO3/PEDOT:PSS-based hybrid device for high-speed UV light detection and ReRAM applications.
Authors: Rasool, Asif1 (AUTHOR), Amiruddin, R.1 (AUTHOR) amirphy9@yahoo.com, Kossar, Shahnaz1 (AUTHOR), Kumar, MC Santhosh2 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. Feb2022, Vol. 33 Issue 4, p2090-2100. 11p.
Subjects: Cross-sectional method, Anions, Pyrolysis, Fibers
Abstract: The current research work focuses on the realization of n-ZnO/MoO3/PEDOT:PSS-based hybrid device. The fabricated device exhibits multi-task operations, including ultraviolet (UV) light detection and non-volatile resistive switching (RS) memory applications. The optimum n-ZnO and intermediate MoO3layers were deposited using the spray pyrolysis technique at 698 K and 670 K, respectively. Using a spin-coating technique, the PEDOT:PSS layer was deposited at 2000 rpm. The structural analysis and the cross-sectional FESEM analysis of the fabricated device validate the presence of a multi-layered thin-film structure. The current-voltage (I-V), UV photoresponse, and RS behavior of the fabricated n-ZnO/MoO3/PEDOT:PSS-based hybrid device was investigated. The hybrid device shows a higher photoresponsivity (R) value of 0.42 A/W with a fast rise and fall time value measured as 310 ms and 970 ms, respectively. The RS analysis of the fabricated hybrid device shows a stable endurance characteristic for more than 100 cycles. Formation/rupture of conductive filaments using anions (O2−) and cations (Ag+) across the interface of the fabricated hybrid device was proposed as a possible RS mechanism. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Multifunctional n-ZnO/MoO<subscript>3</subscript>/PEDOT:PSS-based hybrid device for high-speed UV light detection and ReRAM applications.
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  Data: <searchLink fieldCode="AR" term="%22Rasool%2C+Asif%22">Rasool, Asif</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Amiruddin%2C+R%2E%22">Amiruddin, R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> amirphy9@yahoo.com</i><br /><searchLink fieldCode="AR" term="%22Kossar%2C+Shahnaz%22">Kossar, Shahnaz</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kumar%2C+MC+Santhosh%22">Kumar, MC Santhosh</searchLink><relatesTo>2</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Feb2022, Vol. 33 Issue 4, p2090-2100. 11p.
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  Data: <searchLink fieldCode="DE" term="%22Cross-sectional+method%22">Cross-sectional method</searchLink><br /><searchLink fieldCode="DE" term="%22Anions%22">Anions</searchLink><br /><searchLink fieldCode="DE" term="%22Pyrolysis%22">Pyrolysis</searchLink><br /><searchLink fieldCode="DE" term="%22Fibers%22">Fibers</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: The current research work focuses on the realization of n-ZnO/MoO3/PEDOT:PSS-based hybrid device. The fabricated device exhibits multi-task operations, including ultraviolet (UV) light detection and non-volatile resistive switching (RS) memory applications. The optimum n-ZnO and intermediate MoO3layers were deposited using the spray pyrolysis technique at 698 K and 670 K, respectively. Using a spin-coating technique, the PEDOT:PSS layer was deposited at 2000 rpm. The structural analysis and the cross-sectional FESEM analysis of the fabricated device validate the presence of a multi-layered thin-film structure. The current-voltage (I-V), UV photoresponse, and RS behavior of the fabricated n-ZnO/MoO3/PEDOT:PSS-based hybrid device was investigated. The hybrid device shows a higher photoresponsivity (R) value of 0.42 A/W with a fast rise and fall time value measured as 310 ms and 970 ms, respectively. The RS analysis of the fabricated hybrid device shows a stable endurance characteristic for more than 100 cycles. Formation/rupture of conductive filaments using anions (O2−) and cations (Ag+) across the interface of the fabricated hybrid device was proposed as a possible RS mechanism. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1007/s10854-021-07414-z
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 2090
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      – SubjectFull: Cross-sectional method
        Type: general
      – SubjectFull: Anions
        Type: general
      – SubjectFull: Pyrolysis
        Type: general
      – SubjectFull: Fibers
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      – TitleFull: Multifunctional n-ZnO/MoO3/PEDOT:PSS-based hybrid device for high-speed UV light detection and ReRAM applications.
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            NameFull: Rasool, Asif
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            NameFull: Amiruddin, R.
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            NameFull: Kossar, Shahnaz
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            NameFull: Kumar, MC Santhosh
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            – D: 15
              M: 02
              Text: Feb2022
              Type: published
              Y: 2022
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