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Experimental and theoretical investigations of delamination at free edge of interface between piezoelectric thin films on a substrate

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Title: Experimental and theoretical investigations of delamination at free edge of interface between piezoelectric thin films on a substrate
Authors: Shang, F.1 shang@cyber.kues.kyoto-u.ac.jp, Kitamura, T.1, Hirakata, H.1, Kanno, I.2, Kotera, H.2, Terada, K.2
Source: International Journal of Solids & Structures. Mar2005, Vol. 42 Issue 5/6, p1729-1741. 13p.
Subjects: Thick films, Microelectronics, Surfaces (Technology), Silicon
Abstract: Abstract: The interface strength of Pb(Zr,Ti)O3 (PZT) thin films on a silicon substrate is studied experimentally and theoretically in this work. The focus is put on crack initiation from the free edge of the interface. A novel method of sandwiched cantilever specimen is utilized to perform the delamination tests. Theoretical analyses are performed on the singular behavior of the stress in the vicinity of the free edge along the interface between Cr layer and PZT layer, and on the distribution of normal stress at the delamination loads. Based on these results, a delamination criterion involving stress intensity parameter is adopted to estimate the interface toughness for crack initiation at the free edge along the interface Cr/PZT. [Copyright &y& Elsevier]
Copyright of International Journal of Solids & Structures is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 15549819
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Experimental and theoretical investigations of delamination at free edge of interface between piezoelectric thin films on a substrate
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  Data: <searchLink fieldCode="AR" term="%22Shang%2C+F%2E%22">Shang, F.</searchLink><relatesTo>1</relatesTo><i> shang@cyber.kues.kyoto-u.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Kitamura%2C+T%2E%22">Kitamura, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hirakata%2C+H%2E%22">Hirakata, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kanno%2C+I%2E%22">Kanno, I.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kotera%2C+H%2E%22">Kotera, H.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Terada%2C+K%2E%22">Terada, K.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Solids+%26+Structures%22">International Journal of Solids & Structures</searchLink>. Mar2005, Vol. 42 Issue 5/6, p1729-1741. 13p.
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  Data: <searchLink fieldCode="DE" term="%22Thick+films%22">Thick films</searchLink><br /><searchLink fieldCode="DE" term="%22Microelectronics%22">Microelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Surfaces+%28Technology%29%22">Surfaces (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: The interface strength of Pb(Zr,Ti)O3 (PZT) thin films on a silicon substrate is studied experimentally and theoretically in this work. The focus is put on crack initiation from the free edge of the interface. A novel method of sandwiched cantilever specimen is utilized to perform the delamination tests. Theoretical analyses are performed on the singular behavior of the stress in the vicinity of the free edge along the interface between Cr layer and PZT layer, and on the distribution of normal stress at the delamination loads. Based on these results, a delamination criterion involving stress intensity parameter is adopted to estimate the interface toughness for crack initiation at the free edge along the interface Cr/PZT. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of International Journal of Solids & Structures is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.ijsolstr.2004.08.004
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      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 1729
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        Type: general
      – SubjectFull: Microelectronics
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      – SubjectFull: Surfaces (Technology)
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      – SubjectFull: Silicon
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      – TitleFull: Experimental and theoretical investigations of delamination at free edge of interface between piezoelectric thin films on a substrate
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            NameFull: Kitamura, T.
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            NameFull: Kanno, I.
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              Text: Mar2005
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              Y: 2005
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