Low-temperature plasma atomic layer etching of molybdenum via sequential oxidation and chlorination.
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| Title: | Low-temperature plasma atomic layer etching of molybdenum via sequential oxidation and chlorination. |
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| Authors: | Lee, Yebin1 (AUTHOR), Kim, Yongjae2 (AUTHOR), Son, Jiwon3 (AUTHOR), Chae, Heeyeop1,2 (AUTHOR) hchae@skku.edu |
| Source: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Mar2022, Vol. 40 Issue 2, p1-7. 7p. |
| Subjects: | Water chlorination, Molybdenum, Chlorination, X-ray photoelectron spectroscopy, Molybdenum oxides, Oxidation |
| Abstract: | In this study, an atomic layer etching (ALE) process for molybdenum was developed in two steps: plasma oxidation and plasma chlorination. In the plasma oxidation step, molybdenum was oxidized with oxygen plasma to form molybdenum oxide. As the plasma oxidation time increased, the atomic ratio of O-to-Mo, determined by x-ray photoelectron spectroscopy, increased, and then saturated to a value of 2.3. The oxidation depth of molybdenum was found to increase with increasing oxidation temperature—from 3.0 nm at 40 °C to 22.0 nm at 300 °C. It also increased with increasing RF (radio frequency) power—from 2.0 nm at 5 W to 5.5 nm at 25 W. In the plasma chlorination step, it is believed that molybdenum oxide was removed from the surface by forming molybdenum oxychloride (MoOCl2, MoOCl4, and MoO2Cl2) in chlorine plasma in the temperature range of 40–300 °C. The etch per cycle (EPC) continuously increased at temperatures above 100 °C; however, at temperatures below 40 °C, it was saturated. The RF power increased the EPC from 2.2 to 5.8 nm/cycle in the range of 5–25 W. It was found that the removal depth matched the oxidation depth at each RF power in ALE at 40 °C. The atomic composition of molybdenum after ALE was almost identical to that before ALE. This study demonstrates that the ALE of molybdenum at 40 °C can be realized by sequential plasma oxidation and chlorination. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 155579850 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Low-temperature plasma atomic layer etching of molybdenum via sequential oxidation and chlorination. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Lee%2C+Yebin%22">Lee, Yebin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Yongjae%22">Kim, Yongjae</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Son%2C+Jiwon%22">Son, Jiwon</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chae%2C+Heeyeop%22">Chae, Heeyeop</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> hchae@skku.edu</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Mar2022, Vol. 40 Issue 2, p1-7. 7p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Water+chlorination%22">Water chlorination</searchLink><br /><searchLink fieldCode="DE" term="%22Molybdenum%22">Molybdenum</searchLink><br /><searchLink fieldCode="DE" term="%22Chlorination%22">Chlorination</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Molybdenum+oxides%22">Molybdenum oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Oxidation%22">Oxidation</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this study, an atomic layer etching (ALE) process for molybdenum was developed in two steps: plasma oxidation and plasma chlorination. In the plasma oxidation step, molybdenum was oxidized with oxygen plasma to form molybdenum oxide. As the plasma oxidation time increased, the atomic ratio of O-to-Mo, determined by x-ray photoelectron spectroscopy, increased, and then saturated to a value of 2.3. The oxidation depth of molybdenum was found to increase with increasing oxidation temperature—from 3.0 nm at 40 °C to 22.0 nm at 300 °C. It also increased with increasing RF (radio frequency) power—from 2.0 nm at 5 W to 5.5 nm at 25 W. In the plasma chlorination step, it is believed that molybdenum oxide was removed from the surface by forming molybdenum oxychloride (MoOCl2, MoOCl4, and MoO2Cl2) in chlorine plasma in the temperature range of 40–300 °C. The etch per cycle (EPC) continuously increased at temperatures above 100 °C; however, at temperatures below 40 °C, it was saturated. The RF power increased the EPC from 2.2 to 5.8 nm/cycle in the range of 5–25 W. It was found that the removal depth matched the oxidation depth at each RF power in ALE at 40 °C. The atomic composition of molybdenum after ALE was almost identical to that before ALE. This study demonstrates that the ALE of molybdenum at 40 °C can be realized by sequential plasma oxidation and chlorination. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1116/6.0001603 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 1 Subjects: – SubjectFull: Water chlorination Type: general – SubjectFull: Molybdenum Type: general – SubjectFull: Chlorination Type: general – SubjectFull: X-ray photoelectron spectroscopy Type: general – SubjectFull: Molybdenum oxides Type: general – SubjectFull: Oxidation Type: general Titles: – TitleFull: Low-temperature plasma atomic layer etching of molybdenum via sequential oxidation and chlorination. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Lee, Yebin – PersonEntity: Name: NameFull: Kim, Yongjae – PersonEntity: Name: NameFull: Son, Jiwon – PersonEntity: Name: NameFull: Chae, Heeyeop IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 03 Text: Mar2022 Type: published Y: 2022 Identifiers: – Type: issn-print Value: 07342101 Numbering: – Type: volume Value: 40 – Type: issue Value: 2 Titles: – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films Type: main |
| ResultId | 1 |
