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Numerical and experimental investigation on mc-Silicon growth process by varying the Si3N4 coating thickness of crucible.

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Title: Numerical and experimental investigation on mc-Silicon growth process by varying the Si3N4 coating thickness of crucible.
Authors: Anbu, G.1 (AUTHOR) anvini777@gmail.com, Srinivasan Supervisor, M.1 (AUTHOR), Aravindan, G.1 (AUTHOR), Avinash Kumar, M.1 (AUTHOR), Ramasamy, P.1 (AUTHOR), Sun, Niefeng2 (AUTHOR), Sun, Tongnian2 (AUTHOR), Li, Zaoyang3 (AUTHOR)
Source: Journal of Crystal Growth. May2022, Vol. 586, pN.PAG-N.PAG. 1p.
Subjects: Directional solidification, Silicon oxide, Crucibles, Carbon monoxide, Surface coatings, Silicon carbide
Abstract: • The effect of Si 3 N 4 thickness on impurity concentration has been investigated. • The concentration of carbon monoxide and silicon oxide in the gas domain has been investigated. • The concentration of carbon, oxygen and silicon carbide in the grown mc-Si ingots by varying the Si 3 N 4 thickness. • 200 μm Si 3 N 4 coated crucible was used in the experiment. • The central wafer shows the minority carrier lifetime of 91.5 μs. In the present work, the bottom-opening directional solidification technique was adopted to grow multi-crystalline silicon ingot. By varying the thickness of Si 3 N 4 coating on the quartz crucible, the variation in carbon and oxygen concentration in the ingot has been analyzed. The axis-symmetric time-dependent 2D modeling has been done to analyze heat and mass transfer within the directional solidification furnace. We have analyzed the concentration of carbon monoxide, silicon oxide, silicon carbide, carbon and oxygen in the grown mc-Si ingots by varying the Si 3 N 4 thickness. The oxygen and carbon impurities concentration are higher for the Si 3 N 4 coating thickness of 50 μm to 150 μm and lower for 200 μm. The minority carrier lifetimes of the top, middle and bottom wafers have been analysied. The results show that the middle wafer has higher minority carrier lifetime compared to top and bottom wafers. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 156049889
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Numerical and experimental investigation on mc-Silicon growth process by varying the Si3N4 coating thickness of crucible.
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  Data: <searchLink fieldCode="AR" term="%22Anbu%2C+G%2E%22">Anbu, G.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> anvini777@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Srinivasan+Supervisor%2C+M%2E%22">Srinivasan Supervisor, M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Aravindan%2C+G%2E%22">Aravindan, G.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Avinash+Kumar%2C+M%2E%22">Avinash Kumar, M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ramasamy%2C+P%2E%22">Ramasamy, P.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sun%2C+Niefeng%22">Sun, Niefeng</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sun%2C+Tongnian%22">Sun, Tongnian</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Zaoyang%22">Li, Zaoyang</searchLink><relatesTo>3</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. May2022, Vol. 586, pN.PAG-N.PAG. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Directional+solidification%22">Directional solidification</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+oxide%22">Silicon oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Crucibles%22">Crucibles</searchLink><br /><searchLink fieldCode="DE" term="%22Carbon+monoxide%22">Carbon monoxide</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+coatings%22">Surface coatings</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: • The effect of Si 3 N 4 thickness on impurity concentration has been investigated. • The concentration of carbon monoxide and silicon oxide in the gas domain has been investigated. • The concentration of carbon, oxygen and silicon carbide in the grown mc-Si ingots by varying the Si 3 N 4 thickness. • 200 μm Si 3 N 4 coated crucible was used in the experiment. • The central wafer shows the minority carrier lifetime of 91.5 μs. In the present work, the bottom-opening directional solidification technique was adopted to grow multi-crystalline silicon ingot. By varying the thickness of Si 3 N 4 coating on the quartz crucible, the variation in carbon and oxygen concentration in the ingot has been analyzed. The axis-symmetric time-dependent 2D modeling has been done to analyze heat and mass transfer within the directional solidification furnace. We have analyzed the concentration of carbon monoxide, silicon oxide, silicon carbide, carbon and oxygen in the grown mc-Si ingots by varying the Si 3 N 4 thickness. The oxygen and carbon impurities concentration are higher for the Si 3 N 4 coating thickness of 50 μm to 150 μm and lower for 200 μm. The minority carrier lifetimes of the top, middle and bottom wafers have been analysied. The results show that the middle wafer has higher minority carrier lifetime compared to top and bottom wafers. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.jcrysgro.2022.126608
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Directional solidification
        Type: general
      – SubjectFull: Silicon oxide
        Type: general
      – SubjectFull: Crucibles
        Type: general
      – SubjectFull: Carbon monoxide
        Type: general
      – SubjectFull: Surface coatings
        Type: general
      – SubjectFull: Silicon carbide
        Type: general
    Titles:
      – TitleFull: Numerical and experimental investigation on mc-Silicon growth process by varying the Si3N4 coating thickness of crucible.
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            NameFull: Anbu, G.
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            NameFull: Srinivasan Supervisor, M.
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            NameFull: Aravindan, G.
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            NameFull: Avinash Kumar, M.
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            NameFull: Sun, Tongnian
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            – D: 15
              M: 05
              Text: May2022
              Type: published
              Y: 2022
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              Value: 00220248
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              Value: 586
          Titles:
            – TitleFull: Journal of Crystal Growth
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