Ferromagnetic Behavior and Magneto-Optical Properties of Semiconducting Co-Doped ZnO.

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Title: Ferromagnetic Behavior and Magneto-Optical Properties of Semiconducting Co-Doped ZnO.
Authors: Di Trolio, Antonio1 (AUTHOR) antonio.ditrolio@cnr.it, Testa, Alberto M.2 (AUTHOR) albertomaria.testa@mlib.ism.cnr.it, Amore Bonapasta, Aldo2 (AUTHOR) aldo.amore@mlib.ism.cnr.it
Source: Nanomaterials (2079-4991). May2022, Vol. 12 Issue 9, p1525-1525. 22p.
Subjects: Zinc oxide films, Oxygen vacancy, Magnetooptics, Semiconductors, Thin films
Abstract: ZnO is a well-known semiconducting material showing a wide bandgap and an n-type intrinsic behavior of high interest in applications such as transparent electronics, piezoelectricity, optoelectronics, and photovoltaics. This semiconductor becomes even more attractive when doped with a few atomic percent of a transition metal. Indeed, e.g., the introduction of substitutional Co atoms in ZnO (ZCO) induces the appearance of room temperature ferromagnetism (RT-FM) and magneto-optical effects, making this material one of the most important representatives of so-called dilute magnetic semiconductors (DMSs). In the present review, we discuss the magnetic and magneto-optical properties of Co-doped ZnO thin films by considering also the significant improvements in the properties induced by post-growth irradiation with atomic hydrogen. We also show how all of these properties can be accounted for by a theoretical model based on the formation of Co-VO (oxygen vacancy) complexes and the concurrent presence of shallow donor defects, thus giving a sound support to this model to explain the RT-FM in ZCO DMSs. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Ferromagnetic Behavior and Magneto-Optical Properties of Semiconducting Co-Doped ZnO.
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  Data: <searchLink fieldCode="AR" term="%22Di+Trolio%2C+Antonio%22">Di Trolio, Antonio</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> antonio.ditrolio@cnr.it</i><br /><searchLink fieldCode="AR" term="%22Testa%2C+Alberto+M%2E%22">Testa, Alberto M.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> albertomaria.testa@mlib.ism.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Amore+Bonapasta%2C+Aldo%22">Amore Bonapasta, Aldo</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> aldo.amore@mlib.ism.cnr.it</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. May2022, Vol. 12 Issue 9, p1525-1525. 22p.
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  Data: <searchLink fieldCode="DE" term="%22Zinc+oxide+films%22">Zinc oxide films</searchLink><br /><searchLink fieldCode="DE" term="%22Oxygen+vacancy%22">Oxygen vacancy</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetooptics%22">Magnetooptics</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: ZnO is a well-known semiconducting material showing a wide bandgap and an n-type intrinsic behavior of high interest in applications such as transparent electronics, piezoelectricity, optoelectronics, and photovoltaics. This semiconductor becomes even more attractive when doped with a few atomic percent of a transition metal. Indeed, e.g., the introduction of substitutional Co atoms in ZnO (ZCO) induces the appearance of room temperature ferromagnetism (RT-FM) and magneto-optical effects, making this material one of the most important representatives of so-called dilute magnetic semiconductors (DMSs). In the present review, we discuss the magnetic and magneto-optical properties of Co-doped ZnO thin films by considering also the significant improvements in the properties induced by post-growth irradiation with atomic hydrogen. We also show how all of these properties can be accounted for by a theoretical model based on the formation of Co-VO (oxygen vacancy) complexes and the concurrent presence of shallow donor defects, thus giving a sound support to this model to explain the RT-FM in ZCO DMSs. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.3390/nano12091525
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 22
        StartPage: 1525
    Subjects:
      – SubjectFull: Zinc oxide films
        Type: general
      – SubjectFull: Oxygen vacancy
        Type: general
      – SubjectFull: Magnetooptics
        Type: general
      – SubjectFull: Semiconductors
        Type: general
      – SubjectFull: Thin films
        Type: general
    Titles:
      – TitleFull: Ferromagnetic Behavior and Magneto-Optical Properties of Semiconducting Co-Doped ZnO.
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          Name:
            NameFull: Di Trolio, Antonio
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            NameFull: Testa, Alberto M.
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            NameFull: Amore Bonapasta, Aldo
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            – D: 01
              M: 05
              Text: May2022
              Type: published
              Y: 2022
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              Value: 12
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              Value: 9
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            – TitleFull: Nanomaterials (2079-4991)
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