Mid-Infrared Response from Cr/n-Si Schottky Junction with an Ultra-Thin Cr Metal.
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| Title: | Mid-Infrared Response from Cr/n-Si Schottky Junction with an Ultra-Thin Cr Metal. |
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| Authors: | Su, Zih-Chun1 (AUTHOR) f06941006@ntu.edu.tw, Li, Yu-Hao1 (AUTHOR) r09941015@ntu.edu.tw, Lin, Ching-Fuh1,2,3 (AUTHOR) lincf@ntu.edu.tw |
| Source: | Nanomaterials (2079-4991). May2022, Vol. 12 Issue 10, p1750-1750. 14p. |
| Subjects: | Hot carriers, Metallic surfaces, Infrared technology, Atomic force microscopy, Polaritons, Signal-to-noise ratio, Photoemission |
| Abstract: | Infrared detection technology has been widely applied in many areas. Unlike internal photoemission and the photoelectric mechanism, which are limited by the interface barrier height and material bandgap, the research of the hot carrier effect from nanometer thickness of metal could surpass the capability of silicon-based Schottky devices to detect mid-infrared and even far-infrared. In this work, we investigate the effects of physical characteristics of Cr nanometal surfaces and metal/silicon interfaces on hot carrier optical detection. Based on the results of scanning electron microscopy, atomic force microscopy, and X-ray diffraction analysis, the hot carrier effect and the variation of optical response intensity are found to depend highly on the physical properties of metal surfaces, such as surface coverage, metal thickness, and internal stress. Since the contact layer formed by Cr and Si is the main role of infrared light detection in the experiment, the higher the metal coverage, the higher the optical response. Additionally, a thicker metal surface makes the hot carriers take a longer time to convert into current signals after generation, leading to signal degradation due to the short lifetime of the hot carriers. Furthermore, the film with the best hot carrier effect induced in the Cr/Si structure is able to detect an infrared signal up to 4.2 μm. Additionally, it has a 229 times improvement in the signal-to-noise ratio (SNR) for a single band compared with ones with less favorable conditions. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 157238504 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Mid-Infrared Response from Cr/n-Si Schottky Junction with an Ultra-Thin Cr Metal. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Su%2C+Zih-Chun%22">Su, Zih-Chun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> f06941006@ntu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Li%2C+Yu-Hao%22">Li, Yu-Hao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> r09941015@ntu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Lin%2C+Ching-Fuh%22">Lin, Ching-Fuh</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> lincf@ntu.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. May2022, Vol. 12 Issue 10, p1750-1750. 14p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Hot+carriers%22">Hot carriers</searchLink><br /><searchLink fieldCode="DE" term="%22Metallic+surfaces%22">Metallic surfaces</searchLink><br /><searchLink fieldCode="DE" term="%22Infrared+technology%22">Infrared technology</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+force+microscopy%22">Atomic force microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Polaritons%22">Polaritons</searchLink><br /><searchLink fieldCode="DE" term="%22Signal-to-noise+ratio%22">Signal-to-noise ratio</searchLink><br /><searchLink fieldCode="DE" term="%22Photoemission%22">Photoemission</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Infrared detection technology has been widely applied in many areas. Unlike internal photoemission and the photoelectric mechanism, which are limited by the interface barrier height and material bandgap, the research of the hot carrier effect from nanometer thickness of metal could surpass the capability of silicon-based Schottky devices to detect mid-infrared and even far-infrared. In this work, we investigate the effects of physical characteristics of Cr nanometal surfaces and metal/silicon interfaces on hot carrier optical detection. Based on the results of scanning electron microscopy, atomic force microscopy, and X-ray diffraction analysis, the hot carrier effect and the variation of optical response intensity are found to depend highly on the physical properties of metal surfaces, such as surface coverage, metal thickness, and internal stress. Since the contact layer formed by Cr and Si is the main role of infrared light detection in the experiment, the higher the metal coverage, the higher the optical response. Additionally, a thicker metal surface makes the hot carriers take a longer time to convert into current signals after generation, leading to signal degradation due to the short lifetime of the hot carriers. Furthermore, the film with the best hot carrier effect induced in the Cr/Si structure is able to detect an infrared signal up to 4.2 μm. Additionally, it has a 229 times improvement in the signal-to-noise ratio (SNR) for a single band compared with ones with less favorable conditions. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano12101750 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 14 StartPage: 1750 Subjects: – SubjectFull: Hot carriers Type: general – SubjectFull: Metallic surfaces Type: general – SubjectFull: Infrared technology Type: general – SubjectFull: Atomic force microscopy Type: general – SubjectFull: Polaritons Type: general – SubjectFull: Signal-to-noise ratio Type: general – SubjectFull: Photoemission Type: general Titles: – TitleFull: Mid-Infrared Response from Cr/n-Si Schottky Junction with an Ultra-Thin Cr Metal. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Su, Zih-Chun – PersonEntity: Name: NameFull: Li, Yu-Hao – PersonEntity: Name: NameFull: Lin, Ching-Fuh IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 05 Text: May2022 Type: published Y: 2022 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 12 – Type: issue Value: 10 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
| ResultId | 1 |
