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Tunable Switching Behavior of GO-Based Memristors Using Thermal Reduction.

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Title: Tunable Switching Behavior of GO-Based Memristors Using Thermal Reduction.
Authors: Abujabal, Muayad1 (AUTHOR) 100057733@ku.ac.ae, Abunahla, Heba2 (AUTHOR) heba.abunahla@ku.ac.ae, Mohammad, Baker2 (AUTHOR) baker.mohammad@ku.ac.ae, Alazzam, Anas1 (AUTHOR) anas.alazzam@ku.ac.ae
Source: Nanomaterials (2079-4991). Jun2022, Vol. 12 Issue 11, p1812-1812. 12p.
Subjects: Memristors, Electric heating, Electric currents, Graphene oxide, Chemical reduction
Abstract: This work reports on the fabrication of a novel planar reduced graphene oxide (rGO) memristor (MR) device. For the first time in the literature, the MR tunable resistive switching behavior is controlled by the GO reduction time at a constant temperature. The device is fabricated using standard microfabrication techniques on a flexible cyclic olefin copolymer substrate (COC). Thermal reduction of the GO layer at low temperatures (100 °C) avoids the drawbacks of chemical reduction methods such as toxicity and electrode metal damage during fabrication, while allowing for fine-tuning of the MR's switching behavior. The device has analog switching characteristics, with a range of different resistance states. By taking advantage of the slow nature of GO thermal annealing, the switching properties of the rGO memristors can be precisely controlled by adjusting the reduction period. At short annealing times (i.e., T < 20 h), the devices switch from high to low resistance states, while at longer annealing times the switching behavior is reversed, with the device switching from low to high resistance states (LRS to HRS). Resistive switching occurs as a result of the diffusion and removal of the oxygen functional groups in the GO film caused by Joule heating induced by the electric current. Complete electrical characterization tests are presented along with wettability and X-ray diffraction (XRD) tests. This work opens a new vision for realizing rGO-based MR devices with tunable switching properties, broadening the application horizon of the device. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Header DbId: egs
DbLabel: Engineering Source
An: 157367846
AccessLevel: 6
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PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Tunable Switching Behavior of GO-Based Memristors Using Thermal Reduction.
– Name: Author
  Label: Authors
  Group: Au
  Data: &lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Abujabal%2C+Muayad%22&quot;&gt;Abujabal, Muayad&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; 100057733@ku.ac.ae&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Abunahla%2C+Heba%22&quot;&gt;Abunahla, Heba&lt;/searchLink&gt;&lt;relatesTo&gt;2&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; heba.abunahla@ku.ac.ae&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Mohammad%2C+Baker%22&quot;&gt;Mohammad, Baker&lt;/searchLink&gt;&lt;relatesTo&gt;2&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; baker.mohammad@ku.ac.ae&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Alazzam%2C+Anas%22&quot;&gt;Alazzam, Anas&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; anas.alazzam@ku.ac.ae&lt;/i&gt;
– Name: TitleSource
  Label: Source
  Group: Src
  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Nanomaterials+%282079-4991%29%22&quot;&gt;Nanomaterials (2079-4991)&lt;/searchLink&gt;. Jun2022, Vol. 12 Issue 11, p1812-1812. 12p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: &lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Memristors%22&quot;&gt;Memristors&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Electric+heating%22&quot;&gt;Electric heating&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Electric+currents%22&quot;&gt;Electric currents&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Graphene+oxide%22&quot;&gt;Graphene oxide&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Chemical+reduction%22&quot;&gt;Chemical reduction&lt;/searchLink&gt;
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This work reports on the fabrication of a novel planar reduced graphene oxide (rGO) memristor (MR) device. For the first time in the literature, the MR tunable resistive switching behavior is controlled by the GO reduction time at a constant temperature. The device is fabricated using standard microfabrication techniques on a flexible cyclic olefin copolymer substrate (COC). Thermal reduction of the GO layer at low temperatures (100 &#176;C) avoids the drawbacks of chemical reduction methods such as toxicity and electrode metal damage during fabrication, while allowing for fine-tuning of the MR&#39;s switching behavior. The device has analog switching characteristics, with a range of different resistance states. By taking advantage of the slow nature of GO thermal annealing, the switching properties of the rGO memristors can be precisely controlled by adjusting the reduction period. At short annealing times (i.e., T &lt; 20 h), the devices switch from high to low resistance states, while at longer annealing times the switching behavior is reversed, with the device switching from low to high resistance states (LRS to HRS). Resistive switching occurs as a result of the diffusion and removal of the oxygen functional groups in the GO film caused by Joule heating induced by the electric current. Complete electrical characterization tests are presented along with wettability and X-ray diffraction (XRD) tests. This work opens a new vision for realizing rGO-based MR devices with tunable switching properties, broadening the application horizon of the device. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: &lt;i&gt;Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/nano12111812
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 12
        StartPage: 1812
    Subjects:
      – SubjectFull: Memristors
        Type: general
      – SubjectFull: Electric heating
        Type: general
      – SubjectFull: Electric currents
        Type: general
      – SubjectFull: Graphene oxide
        Type: general
      – SubjectFull: Chemical reduction
        Type: general
    Titles:
      – TitleFull: Tunable Switching Behavior of GO-Based Memristors Using Thermal Reduction.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Abujabal, Muayad
      – PersonEntity:
          Name:
            NameFull: Abunahla, Heba
      – PersonEntity:
          Name:
            NameFull: Mohammad, Baker
      – PersonEntity:
          Name:
            NameFull: Alazzam, Anas
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 06
              Text: Jun2022
              Type: published
              Y: 2022
          Identifiers:
            – Type: issn-print
              Value: 20794991
          Numbering:
            – Type: volume
              Value: 12
            – Type: issue
              Value: 11
          Titles:
            – TitleFull: Nanomaterials (2079-4991)
              Type: main
ResultId 1