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Photoelectric properties of TlGaxIn1−xSe2 (x=0−1) single crystals.

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Bibliographic Details
Title: Photoelectric properties of TlGaxIn1−xSe2 (x=0−1) single crystals.
Authors: Gojayev, E. M.1 (AUTHOR), Mammadova, G. N.2 (AUTHOR) mammadovagunel188@gmail.com, Rehimov, R. S.1 (AUTHOR), Aliyeva, P. F.1 (AUTHOR)
Source: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics. 6/30/2022, Vol. 36 Issue 16, p1-6. 6p.
Subjects: Single crystals, Solid solutions, Infrared spectra, Photosensitivity
Abstract: This work presents the results of a study of the photoelectric properties of single crystals of the TlGa x In 1 − x Se2 system of solid solutions based on TlInSe2 with high photo and tensile sensitivity and switching properties with memory and TlGaSe2 with high photosensitivity in the visible and infrared regions of the spectrum. Single crystals of the above alloys were grown by the Bridgman–Stockbarger methods. Investigated alloys correspond in x = 0 , 0.1, 0.2, 0.3, 0.4, 0.7, 0.8, 0.9, 1 compounds. It was revealed that these alloys are photosensitive materials, and with a decrease in x from 1 to 0, a shift of the spectral characteristic maxima from 0.57 μ m to 1.35 μ m is observed. The specific resistance at 77–300 K and the bandgap of the investigated phases have been determined. It was found that with an increase in the content of Ga in the composition of solid solutions, the bandgap increases from 1.23 eV to 2.15 eV. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:This work presents the results of a study of the photoelectric properties of single crystals of the TlGa x In 1 − x Se2 system of solid solutions based on TlInSe2 with high photo and tensile sensitivity and switching properties with memory and TlGaSe2 with high photosensitivity in the visible and infrared regions of the spectrum. Single crystals of the above alloys were grown by the Bridgman–Stockbarger methods. Investigated alloys correspond in x = 0 , 0.1, 0.2, 0.3, 0.4, 0.7, 0.8, 0.9, 1 compounds. It was revealed that these alloys are photosensitive materials, and with a decrease in x from 1 to 0, a shift of the spectral characteristic maxima from 0.57 μ m to 1.35 μ m is observed. The specific resistance at 77–300 K and the bandgap of the investigated phases have been determined. It was found that with an increase in the content of Ga in the composition of solid solutions, the bandgap increases from 1.23 eV to 2.15 eV. [ABSTRACT FROM AUTHOR]
ISSN:02179792
DOI:10.1142/S0217979222500837