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Photoelectric properties of TlGaxIn1−xSe2 (x=0−1) single crystals.

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Title: Photoelectric properties of TlGaxIn1−xSe2 (x=0−1) single crystals.
Authors: Gojayev, E. M.1 (AUTHOR), Mammadova, G. N.2 (AUTHOR) mammadovagunel188@gmail.com, Rehimov, R. S.1 (AUTHOR), Aliyeva, P. F.1 (AUTHOR)
Source: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics. 6/30/2022, Vol. 36 Issue 16, p1-6. 6p.
Subjects: Single crystals, Solid solutions, Infrared spectra, Photosensitivity
Abstract: This work presents the results of a study of the photoelectric properties of single crystals of the TlGa x In 1 − x Se2 system of solid solutions based on TlInSe2 with high photo and tensile sensitivity and switching properties with memory and TlGaSe2 with high photosensitivity in the visible and infrared regions of the spectrum. Single crystals of the above alloys were grown by the Bridgman–Stockbarger methods. Investigated alloys correspond in x = 0 , 0.1, 0.2, 0.3, 0.4, 0.7, 0.8, 0.9, 1 compounds. It was revealed that these alloys are photosensitive materials, and with a decrease in x from 1 to 0, a shift of the spectral characteristic maxima from 0.57 μ m to 1.35 μ m is observed. The specific resistance at 77–300 K and the bandgap of the investigated phases have been determined. It was found that with an increase in the content of Ga in the composition of solid solutions, the bandgap increases from 1.23 eV to 2.15 eV. [ABSTRACT FROM AUTHOR]
Copyright of International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 157510983
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Photoelectric properties of TlGaxIn1−xSe<subscript>2</subscript> (x=0−1) single crystals.
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  Data: <searchLink fieldCode="DE" term="%22Single+crystals%22">Single crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Solid+solutions%22">Solid solutions</searchLink><br /><searchLink fieldCode="DE" term="%22Infrared+spectra%22">Infrared spectra</searchLink><br /><searchLink fieldCode="DE" term="%22Photosensitivity%22">Photosensitivity</searchLink>
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  Label: Abstract
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  Data: This work presents the results of a study of the photoelectric properties of single crystals of the TlGa x In 1 − x Se2 system of solid solutions based on TlInSe2 with high photo and tensile sensitivity and switching properties with memory and TlGaSe2 with high photosensitivity in the visible and infrared regions of the spectrum. Single crystals of the above alloys were grown by the Bridgman–Stockbarger methods. Investigated alloys correspond in x = 0 , 0.1, 0.2, 0.3, 0.4, 0.7, 0.8, 0.9, 1 compounds. It was revealed that these alloys are photosensitive materials, and with a decrease in x from 1 to 0, a shift of the spectral characteristic maxima from 0.57 μ m to 1.35 μ m is observed. The specific resistance at 77–300 K and the bandgap of the investigated phases have been determined. It was found that with an increase in the content of Ga in the composition of solid solutions, the bandgap increases from 1.23 eV to 2.15 eV. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1142/S0217979222500837
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      – Code: eng
        Text: English
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      – SubjectFull: Single crystals
        Type: general
      – SubjectFull: Solid solutions
        Type: general
      – SubjectFull: Infrared spectra
        Type: general
      – SubjectFull: Photosensitivity
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      – TitleFull: Photoelectric properties of TlGaxIn1−xSe2 (x=0−1) single crystals.
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            NameFull: Rehimov, R. S.
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            – D: 30
              M: 06
              Text: 6/30/2022
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              Y: 2022
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            – TitleFull: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics
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