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A UV to NIR Si Wavelength Sensor With Simple Geometry and Good Resolution.

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Title: A UV to NIR Si Wavelength Sensor With Simple Geometry and Good Resolution.
Authors: Fu, Can1, Lu, Chuan1, Cheng, Hai-Yang1, Zhang, Xiang1, Zhang, Zhi-Xiang1, Xiao, Yu-Tian2, Lin, Di-Hua2, Wang, Jiang1, Hu, Ji-Gang2, Wang, Zhi-Li2, Wu, Di3, Luo, Lin-Bao1 luolb@hfut.edu.cn
Source: IEEE Transactions on Electron Devices. May2022, Vol. 69 Issue 5, p2457-2461. 5p.
Subjects: Wavelengths, Numerical functions, Detectors, Photodetectors, Computer-aided design
Abstract: In this work, a wavelength sensor that is capable of quantitatively distinguishing the wavelength in the range of ultraviolet (UV) to near-infrared (NIR) light (265–1050 nm) is presented. The wavelength sensor is fabricated by depositing two parallel Au electrodes on the two sides of a $200 ~\mu \text{m}$ Si wafer. It is found that the as-formed two photodetectors display completely different optical properties. And then, the relationship between the photocurrent ratio of two photodetectors and incident wavelength can be described as a numerical function, through which the wavelength from 265 to 1050 nm can be precisely calculated. The unique operation mechanism of the Si wavelength sensor is unveiled by technology computer-aided design (TCAD) simulation. Remarkably, the wavelength sensor easily distinguishes the light with a wavelength difference of 1 nm, which is much better than previously reported devices based on the vertically stacked structures and charge collection narrowing mechanism. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:In this work, a wavelength sensor that is capable of quantitatively distinguishing the wavelength in the range of ultraviolet (UV) to near-infrared (NIR) light (265–1050 nm) is presented. The wavelength sensor is fabricated by depositing two parallel Au electrodes on the two sides of a $200 ~\mu \text{m}$ Si wafer. It is found that the as-formed two photodetectors display completely different optical properties. And then, the relationship between the photocurrent ratio of two photodetectors and incident wavelength can be described as a numerical function, through which the wavelength from 265 to 1050 nm can be precisely calculated. The unique operation mechanism of the Si wavelength sensor is unveiled by technology computer-aided design (TCAD) simulation. Remarkably, the wavelength sensor easily distinguishes the light with a wavelength difference of 1 nm, which is much better than previously reported devices based on the vertically stacked structures and charge collection narrowing mechanism. [ABSTRACT FROM AUTHOR]
ISSN:00189383
DOI:10.1109/TED.2022.3161253