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A UV to NIR Si Wavelength Sensor With Simple Geometry and Good Resolution.

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Title: A UV to NIR Si Wavelength Sensor With Simple Geometry and Good Resolution.
Authors: Fu, Can1, Lu, Chuan1, Cheng, Hai-Yang1, Zhang, Xiang1, Zhang, Zhi-Xiang1, Xiao, Yu-Tian2, Lin, Di-Hua2, Wang, Jiang1, Hu, Ji-Gang2, Wang, Zhi-Li2, Wu, Di3, Luo, Lin-Bao1 luolb@hfut.edu.cn
Source: IEEE Transactions on Electron Devices. May2022, Vol. 69 Issue 5, p2457-2461. 5p.
Subjects: Wavelengths, Numerical functions, Detectors, Photodetectors, Computer-aided design
Abstract: In this work, a wavelength sensor that is capable of quantitatively distinguishing the wavelength in the range of ultraviolet (UV) to near-infrared (NIR) light (265–1050 nm) is presented. The wavelength sensor is fabricated by depositing two parallel Au electrodes on the two sides of a $200 ~\mu \text{m}$ Si wafer. It is found that the as-formed two photodetectors display completely different optical properties. And then, the relationship between the photocurrent ratio of two photodetectors and incident wavelength can be described as a numerical function, through which the wavelength from 265 to 1050 nm can be precisely calculated. The unique operation mechanism of the Si wavelength sensor is unveiled by technology computer-aided design (TCAD) simulation. Remarkably, the wavelength sensor easily distinguishes the light with a wavelength difference of 1 nm, which is much better than previously reported devices based on the vertically stacked structures and charge collection narrowing mechanism. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: A UV to NIR Si Wavelength Sensor With Simple Geometry and Good Resolution.
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  Data: <searchLink fieldCode="AR" term="%22Fu%2C+Can%22">Fu, Can</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lu%2C+Chuan%22">Lu, Chuan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Cheng%2C+Hai-Yang%22">Cheng, Hai-Yang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Xiang%22">Zhang, Xiang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Zhi-Xiang%22">Zhang, Zhi-Xiang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Xiao%2C+Yu-Tian%22">Xiao, Yu-Tian</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Lin%2C+Di-Hua%22">Lin, Di-Hua</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Jiang%22">Wang, Jiang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hu%2C+Ji-Gang%22">Hu, Ji-Gang</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Zhi-Li%22">Wang, Zhi-Li</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Wu%2C+Di%22">Wu, Di</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Luo%2C+Lin-Bao%22">Luo, Lin-Bao</searchLink><relatesTo>1</relatesTo><i> luolb@hfut.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>. May2022, Vol. 69 Issue 5, p2457-2461. 5p.
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  Data: In this work, a wavelength sensor that is capable of quantitatively distinguishing the wavelength in the range of ultraviolet (UV) to near-infrared (NIR) light (265–1050 nm) is presented. The wavelength sensor is fabricated by depositing two parallel Au electrodes on the two sides of a $200 ~\mu \text{m}$ Si wafer. It is found that the as-formed two photodetectors display completely different optical properties. And then, the relationship between the photocurrent ratio of two photodetectors and incident wavelength can be described as a numerical function, through which the wavelength from 265 to 1050 nm can be precisely calculated. The unique operation mechanism of the Si wavelength sensor is unveiled by technology computer-aided design (TCAD) simulation. Remarkably, the wavelength sensor easily distinguishes the light with a wavelength difference of 1 nm, which is much better than previously reported devices based on the vertically stacked structures and charge collection narrowing mechanism. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TED.2022.3161253
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      – Code: eng
        Text: English
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        PageCount: 5
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    Subjects:
      – SubjectFull: Wavelengths
        Type: general
      – SubjectFull: Numerical functions
        Type: general
      – SubjectFull: Detectors
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      – SubjectFull: Photodetectors
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      – SubjectFull: Computer-aided design
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      – TitleFull: A UV to NIR Si Wavelength Sensor With Simple Geometry and Good Resolution.
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            – D: 01
              M: 05
              Text: May2022
              Type: published
              Y: 2022
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