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Growth and characterization of (Sc2O3)x(Ga2O3)1−x by molecular beam epitaxy.

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Title: Growth and characterization of (Sc2O3)x(Ga2O3)1−x by molecular beam epitaxy.
Authors: Hlad, Mark S.1 (AUTHOR) spear@mse.ufl.edu, Gila, Brent P.1 (AUTHOR), Abernathy, Cammy R.1 (AUTHOR), Ren, Fan2 (AUTHOR), Pearton, S. J.1 (AUTHOR)
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2022, Vol. 40 Issue 4, p1-10. 10p.
Subjects: Molecular beam epitaxy, Reflection high energy electron diffraction, Gallium alloys, Gadolinium, Surface segregation, Transmission electron microscopy
Abstract: (Sc2O3)x(Ga2O3)1−x was grown by molecular beam epitaxy at low temperatures (100 °C) using a variety of growth sequences to avoid surface segregation of Ga. Continuous and digital growth techniques always produced Ga segregation. This surface segregation was attributed to the stronger bond between the Sc and O compared to the Ga and O. A digital growth technique (alternate opening of Sc and Ga shutters with the O shutter open continuously during the growth) was unsuccessful in eliminating this effect. The segregation was eliminated using a growth technique in which the Ga shutter was closed for a set amount of time toward the end of the growth while the O and Sc shutters remained open. Characterization with reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy revealed the growth of a fine-grained polycrystalline film under these conditions. A third growth technique was used that involved closing the Ga shutter for a set amount of time toward the end of the growth while the O and Sc shutters were open continuously. This technique was successful in depositing a uniform film. However, the breakdown field was only 1.40 MV/cm (at 1 mA/cm2). The addition of Ga to Sc2O3 diminished the insulating properties of the film. These initial experiments indicate that phase segregation is likely to be a major issue with most growth techniques and that alloying Ga2O3 with elements other than Sc, such as Gd or Al, might be a more successful approach. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 157767963
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
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  Data: Growth and characterization of (Sc<subscript>2</subscript>O<subscript>3</subscript>)<subscript>x</subscript>(Ga<subscript>2</subscript>O<subscript>3</subscript>)<subscript>1−x</subscript> by molecular beam epitaxy.
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  Data: <searchLink fieldCode="AR" term="%22Hlad%2C+Mark+S%2E%22">Hlad, Mark S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> spear@mse.ufl.edu</i><br /><searchLink fieldCode="AR" term="%22Gila%2C+Brent+P%2E%22">Gila, Brent P.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Abernathy%2C+Cammy+R%2E%22">Abernathy, Cammy R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ren%2C+Fan%22">Ren, Fan</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pearton%2C+S%2E+J%2E%22">Pearton, S. J.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Jul2022, Vol. 40 Issue 4, p1-10. 10p.
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  Data: <searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Reflection+high+energy+electron+diffraction%22">Reflection high energy electron diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+alloys%22">Gallium alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Gadolinium%22">Gadolinium</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+segregation%22">Surface segregation</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: (Sc2O3)x(Ga2O3)1−x was grown by molecular beam epitaxy at low temperatures (100 °C) using a variety of growth sequences to avoid surface segregation of Ga. Continuous and digital growth techniques always produced Ga segregation. This surface segregation was attributed to the stronger bond between the Sc and O compared to the Ga and O. A digital growth technique (alternate opening of Sc and Ga shutters with the O shutter open continuously during the growth) was unsuccessful in eliminating this effect. The segregation was eliminated using a growth technique in which the Ga shutter was closed for a set amount of time toward the end of the growth while the O and Sc shutters remained open. Characterization with reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy revealed the growth of a fine-grained polycrystalline film under these conditions. A third growth technique was used that involved closing the Ga shutter for a set amount of time toward the end of the growth while the O and Sc shutters were open continuously. This technique was successful in depositing a uniform film. However, the breakdown field was only 1.40 MV/cm (at 1 mA/cm2). The addition of Ga to Sc2O3 diminished the insulating properties of the film. These initial experiments indicate that phase segregation is likely to be a major issue with most growth techniques and that alloying Ga2O3 with elements other than Sc, such as Gd or Al, might be a more successful approach. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1116/6.0001805
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 1
    Subjects:
      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Reflection high energy electron diffraction
        Type: general
      – SubjectFull: Gallium alloys
        Type: general
      – SubjectFull: Gadolinium
        Type: general
      – SubjectFull: Surface segregation
        Type: general
      – SubjectFull: Transmission electron microscopy
        Type: general
    Titles:
      – TitleFull: Growth and characterization of (Sc2O3)x(Ga2O3)1−x by molecular beam epitaxy.
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          Name:
            NameFull: Hlad, Mark S.
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            NameFull: Gila, Brent P.
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            NameFull: Abernathy, Cammy R.
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            NameFull: Ren, Fan
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            NameFull: Pearton, S. J.
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            – D: 01
              M: 07
              Text: Jul2022
              Type: published
              Y: 2022
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              Value: 40
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            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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