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Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates.

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Title: Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates.
Authors: Pan, W. W.1,2, Gu, R. J.1,2, Zhang, Z. K.1,2, Lei, W.1,2 wen.lei@uwa.edu.au, Umana-Membreno, G. A.1,2, Smith, D. J.3, Antoszewski, J.1,2, Faraone, L.1,2
Source: Journal of Electronic Materials. Sep2022, Vol. 51 Issue 9, p4869-4883. 15p.
Subjects: Buffer layers, Infrared array detectors, Molecular beam epitaxy, Auditing standards, Gallium arsenide, Annealing of metals
Abstract: Demand for high-performance HgCdTe infrared detectors with larger array size and lower cost has fuelled the heteroepitaxial growth of HgCdTe on CdTe buffer layers on lattice-mismatched alternative substrates such as Si, Ge, GaAs and GaSb. However, the resulting high threading dislocation (TD) density in HgCdTe/CdTe limits their ultimate application. Herein, strained CdZnTe/CdTe superlattice layers have been used as dislocation filtering layers (DFL) to reduce the TDs in CdTe buffer layers grown on GaAs (211)B substrates (14.4% lattice-mismatch) by molecular beam epitaxy (MBE). Cross-sectional microstructure characterization indicates that the DFLs suppress the propagation of TDs. For optimal Zn content combined with thermal annealing, the DFLs effectively reduce the defect density of the upper-most CdTe layer from low-107 cm−2 to the critical level of below 106 cm−2. In comparison to conventional buffer CdTe layers, the in-plane lattice of the CdTe layers in/near the DFL region is compressively strained, leading to a spread in x-ray double-crystal rocking curve full-width at half-maximum values but better in-plane lattice-matching with HgCdTe. The combined advantages of lower dislocation density and better lattice-matching with HgCdTe indicate that the DFL approach is a promising path towards achieving heteroepitaxy of high-quality HgCdTe on large-area lattice-mismatched substrates for fabricating next-generation infrared detectors. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Sep2022, Vol. 51 Issue 9, p4869-4883. 15p.
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  Data: <searchLink fieldCode="DE" term="%22Buffer+layers%22">Buffer layers</searchLink><br /><searchLink fieldCode="DE" term="%22Infrared+array+detectors%22">Infrared array detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Auditing+standards%22">Auditing standards</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+arsenide%22">Gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Annealing+of+metals%22">Annealing of metals</searchLink>
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  Data: Demand for high-performance HgCdTe infrared detectors with larger array size and lower cost has fuelled the heteroepitaxial growth of HgCdTe on CdTe buffer layers on lattice-mismatched alternative substrates such as Si, Ge, GaAs and GaSb. However, the resulting high threading dislocation (TD) density in HgCdTe/CdTe limits their ultimate application. Herein, strained CdZnTe/CdTe superlattice layers have been used as dislocation filtering layers (DFL) to reduce the TDs in CdTe buffer layers grown on GaAs (211)B substrates (14.4% lattice-mismatch) by molecular beam epitaxy (MBE). Cross-sectional microstructure characterization indicates that the DFLs suppress the propagation of TDs. For optimal Zn content combined with thermal annealing, the DFLs effectively reduce the defect density of the upper-most CdTe layer from low-107 cm−2 to the critical level of below 106 cm−2. In comparison to conventional buffer CdTe layers, the in-plane lattice of the CdTe layers in/near the DFL region is compressively strained, leading to a spread in x-ray double-crystal rocking curve full-width at half-maximum values but better in-plane lattice-matching with HgCdTe. The combined advantages of lower dislocation density and better lattice-matching with HgCdTe indicate that the DFL approach is a promising path towards achieving heteroepitaxy of high-quality HgCdTe on large-area lattice-mismatched substrates for fabricating next-generation infrared detectors. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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              Text: Sep2022
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