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Novel Step Field Plate RF LDMOS Transistor for Improved BV DS - R on Tradeoff and RF Performance.

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Title: Novel Step Field Plate RF LDMOS Transistor for Improved BV DS - R on Tradeoff and RF Performance.
Authors: Patel, Rutu1, Mohapatra, Nihar R.1 nihar@iitgn.ac.in
Source: IEEE Transactions on Electron Devices. Aug2022, Vol. 69 Issue 8, p4401-4407. 7p.
Subjects: Breakdown voltage, Complementary metal oxide semiconductors, Silicon nitride, Electric fields, Dielectrics
Abstract: In this article, a novel step field plate (SFP) laterally diffused metal–oxide–semiconductor (LDMOS) structure is proposed for improved breakdown voltage- ON resistance tradeoff and better RF performance. The proposed structure could be easily integrated into the CMOS process flow using four additional noncritical masks. The known materials like fully silicided polysilicon and silicon nitride (SiN) are used as FP and dielectric, respectively. The proposed design improves the device performance by uniformly distributing the electric field in the drift region. The higher drift doping for the same OFF-state breakdown voltage improves the ON resistance by $\sim 2.5\times $ and ON-state breakdown voltage by $\sim 2\times $. Significant improvements in frequency behavior and flat power response are also observed. The device physics behind different observations are explained using detailed TCAD simulations. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Novel Step Field Plate RF LDMOS Transistor for Improved BV DS - R on Tradeoff and RF Performance.
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  Data: <searchLink fieldCode="AR" term="%22Patel%2C+Rutu%22">Patel, Rutu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mohapatra%2C+Nihar+R%2E%22">Mohapatra, Nihar R.</searchLink><relatesTo>1</relatesTo><i> nihar@iitgn.ac.in</i>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>. Aug2022, Vol. 69 Issue 8, p4401-4407. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Breakdown+voltage%22">Breakdown voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nitride%22">Silicon nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+fields%22">Electric fields</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectrics%22">Dielectrics</searchLink>
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  Data: In this article, a novel step field plate (SFP) laterally diffused metal–oxide–semiconductor (LDMOS) structure is proposed for improved breakdown voltage- ON resistance tradeoff and better RF performance. The proposed structure could be easily integrated into the CMOS process flow using four additional noncritical masks. The known materials like fully silicided polysilicon and silicon nitride (SiN) are used as FP and dielectric, respectively. The proposed design improves the device performance by uniformly distributing the electric field in the drift region. The higher drift doping for the same OFF-state breakdown voltage improves the ON resistance by $\sim 2.5\times $ and ON-state breakdown voltage by $\sim 2\times $. Significant improvements in frequency behavior and flat power response are also observed. The device physics behind different observations are explained using detailed TCAD simulations. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1109/TED.2022.3182296
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 4401
    Subjects:
      – SubjectFull: Breakdown voltage
        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
      – SubjectFull: Silicon nitride
        Type: general
      – SubjectFull: Electric fields
        Type: general
      – SubjectFull: Dielectrics
        Type: general
    Titles:
      – TitleFull: Novel Step Field Plate RF LDMOS Transistor for Improved BV DS - R on Tradeoff and RF Performance.
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              Text: Aug2022
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              Y: 2022
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            – TitleFull: IEEE Transactions on Electron Devices
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