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Synthesis of ultrathin heteroepitaxial 3C-SiC films by pyrolysis of molecular layer deposition polyamide films on Si.

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Title: Synthesis of ultrathin heteroepitaxial 3C-SiC films by pyrolysis of molecular layer deposition polyamide films on Si.
Authors: Amashaev, Rustam R.1 (AUTHOR), Alikhanov, Nariman M.-R.1 (AUTHOR), Ismailov, Abubakar M.1 (AUTHOR), Abdulagatov, Ilmutdin M.1 (AUTHOR) ilmutdina@gmail.com
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Sep2022, Vol. 40 Issue 5, p1-11. 11p.
Subjects: Robert Bosch GmbH, Monomolecular films, X-ray photoelectron spectroscopy, Transmission electron microscopes, Thin films, Polyamides
Abstract: Polyamide films were grown on Si(111) using a molecular layer deposition (MLD) process with 1,2-ethylenediamine and trimesoyl chloride precursors at 120 °C. Synthesized polyamide films on Si(111) were then pyrolyzed in vacuum (10−7 Torr) to yield crystalline SiC thin films. High-resolution transmission electron microscope images of heat-treated samples showed the heteroepitaxial nature of the synthesized 3C-SiC (β-SiC) with respect to the Si(111) substrate. Raman, x-ray photoelectron spectroscopy, and x-ray diffraction analysis confirmed the formation of single-crystal SiC films. Samples pyrolyzed at 1300 °C showed defects attributed to Si sublimation. Formation of highly conformal SiC film after pyrolysis was demonstrated using Bosch-processed Si trenches. The thicknesses of 3C-SiC films obtained after pyrolysis were linearly dependent on the number of MLD cycles used to deposit polyamide films. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Polyamide films were grown on Si(111) using a molecular layer deposition (MLD) process with 1,2-ethylenediamine and trimesoyl chloride precursors at 120 °C. Synthesized polyamide films on Si(111) were then pyrolyzed in vacuum (10−7 Torr) to yield crystalline SiC thin films. High-resolution transmission electron microscope images of heat-treated samples showed the heteroepitaxial nature of the synthesized 3C-SiC (β-SiC) with respect to the Si(111) substrate. Raman, x-ray photoelectron spectroscopy, and x-ray diffraction analysis confirmed the formation of single-crystal SiC films. Samples pyrolyzed at 1300 °C showed defects attributed to Si sublimation. Formation of highly conformal SiC film after pyrolysis was demonstrated using Bosch-processed Si trenches. The thicknesses of 3C-SiC films obtained after pyrolysis were linearly dependent on the number of MLD cycles used to deposit polyamide films. [ABSTRACT FROM AUTHOR]
ISSN:07342101
DOI:10.1116/6.0001889