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Damage in Xe-implanted 4H-SiC under severe conditions.

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Title: Damage in Xe-implanted 4H-SiC under severe conditions.
Authors: Beaufort, M.-F.1 (AUTHOR), Burcea, R.1 (AUTHOR), Barbot, J.-F.1 (AUTHOR) jean.francois.barbot@univ-poitiers.fr
Source: Journal of Nuclear Materials. Nov2022, Vol. 570, pN.PAG-N.PAG. 1p.
Subjects: Transmission electron microscopy, Xenon, Krypton
Abstract: • At a temperature of 700 °C the vacancies in SiC are mobile enough to form cavities. • Small Solid xenon bubbles form in implanted/annealed SiC. • The stacking faults are related to the formation of bubbles. • SiC confines xenon. Xenon ions were implanted in 4H-SiC at 400 and 700 °C with fluences of 1 × 1016 and 3 × 1016 cm−2, respectively. Transmission Electron Microscopy (TEM) experiments were carried out to study the resulting microstructure and its evolution after a 1400 °C annealing. Observations show that the temperature of implantation plays an active role in the formation of as-generated defects. The implantation temperature of 400 °C is too low to allow the formation of visible defects and only a strongly damaged band is observed in the ion stopping range. The post-implantation annealing results in the formation of nanometric cavities along the ion path. In the buried ion stopping region, xenon solid cavities or nano-precipitates of about 10 nm in diameter are present. Other types of defects were also formed during annealing, a high density of stacking faults is observed among the solid cavities and black spot defects are observed beyond the implanted area. At a temperature of 700 °C, the vacancies become mobile enough to cause the formation of nanocavities all along the ions path, i.e. voids in the near surface region and full-gas cavities in the xenon stopping range. At this temperature stacking faults were also formed as well as the defect band at the back. The annealing only causes a slight growth of the solid cavities. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Nuclear Materials is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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  Label: Title
  Group: Ti
  Data: Damage in Xe-implanted 4H-SiC under severe conditions.
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  Data: <searchLink fieldCode="AR" term="%22Beaufort%2C+M%2E-F%2E%22">Beaufort, M.-F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Burcea%2C+R%2E%22">Burcea, R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Barbot%2C+J%2E-F%2E%22">Barbot, J.-F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jean.francois.barbot@univ-poitiers.fr</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Nuclear+Materials%22">Journal of Nuclear Materials</searchLink>. Nov2022, Vol. 570, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Xenon%22">Xenon</searchLink><br /><searchLink fieldCode="DE" term="%22Krypton%22">Krypton</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: • At a temperature of 700 °C the vacancies in SiC are mobile enough to form cavities. • Small Solid xenon bubbles form in implanted/annealed SiC. • The stacking faults are related to the formation of bubbles. • SiC confines xenon. Xenon ions were implanted in 4H-SiC at 400 and 700 °C with fluences of 1 × 1016 and 3 × 1016 cm−2, respectively. Transmission Electron Microscopy (TEM) experiments were carried out to study the resulting microstructure and its evolution after a 1400 °C annealing. Observations show that the temperature of implantation plays an active role in the formation of as-generated defects. The implantation temperature of 400 °C is too low to allow the formation of visible defects and only a strongly damaged band is observed in the ion stopping range. The post-implantation annealing results in the formation of nanometric cavities along the ion path. In the buried ion stopping region, xenon solid cavities or nano-precipitates of about 10 nm in diameter are present. Other types of defects were also formed during annealing, a high density of stacking faults is observed among the solid cavities and black spot defects are observed beyond the implanted area. At a temperature of 700 °C, the vacancies become mobile enough to cause the formation of nanocavities all along the ions path, i.e. voids in the near surface region and full-gas cavities in the xenon stopping range. At this temperature stacking faults were also formed as well as the defect band at the back. The annealing only causes a slight growth of the solid cavities. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Nuclear Materials is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.jnucmat.2022.153941
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Transmission electron microscopy
        Type: general
      – SubjectFull: Xenon
        Type: general
      – SubjectFull: Krypton
        Type: general
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      – TitleFull: Damage in Xe-implanted 4H-SiC under severe conditions.
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            NameFull: Burcea, R.
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            – D: 01
              M: 11
              Text: Nov2022
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              Y: 2022
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              Value: 570
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