Damage in Xe-implanted 4H-SiC under severe conditions.
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| Title: | Damage in Xe-implanted 4H-SiC under severe conditions. |
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| Authors: | Beaufort, M.-F.1 (AUTHOR), Burcea, R.1 (AUTHOR), Barbot, J.-F.1 (AUTHOR) jean.francois.barbot@univ-poitiers.fr |
| Source: | Journal of Nuclear Materials. Nov2022, Vol. 570, pN.PAG-N.PAG. 1p. |
| Subjects: | Transmission electron microscopy, Xenon, Krypton |
| Abstract: | • At a temperature of 700 °C the vacancies in SiC are mobile enough to form cavities. • Small Solid xenon bubbles form in implanted/annealed SiC. • The stacking faults are related to the formation of bubbles. • SiC confines xenon. Xenon ions were implanted in 4H-SiC at 400 and 700 °C with fluences of 1 × 1016 and 3 × 1016 cm−2, respectively. Transmission Electron Microscopy (TEM) experiments were carried out to study the resulting microstructure and its evolution after a 1400 °C annealing. Observations show that the temperature of implantation plays an active role in the formation of as-generated defects. The implantation temperature of 400 °C is too low to allow the formation of visible defects and only a strongly damaged band is observed in the ion stopping range. The post-implantation annealing results in the formation of nanometric cavities along the ion path. In the buried ion stopping region, xenon solid cavities or nano-precipitates of about 10 nm in diameter are present. Other types of defects were also formed during annealing, a high density of stacking faults is observed among the solid cavities and black spot defects are observed beyond the implanted area. At a temperature of 700 °C, the vacancies become mobile enough to cause the formation of nanocavities all along the ions path, i.e. voids in the near surface region and full-gas cavities in the xenon stopping range. At this temperature stacking faults were also formed as well as the defect band at the back. The annealing only causes a slight growth of the solid cavities. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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