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High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices.

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Title: High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices.
Authors: Peverini, Francesca1,2 (AUTHOR) francesca.peverini@studenti.unipg.it, Bizzarri, Marco1,2 (AUTHOR), Boscardin, Maurizio3,4 (AUTHOR), Calcagnile, Lucio5 (AUTHOR), Caprai, Mirco1 (AUTHOR), Caricato, Anna Paola6 (AUTHOR), Cirrone, Giuseppe Antonio Pablo7 (AUTHOR), Crivellari, Michele4 (AUTHOR), Cuttone, Giacomo7 (AUTHOR), Dunand, Sylvain8 (AUTHOR), Fanò, Livio1,2 (AUTHOR), Gianfelici, Benedetta1,2 (AUTHOR), Hammad, Omar4 (AUTHOR), Ionica, Maria1 (AUTHOR), Kanxheri, Keida1 (AUTHOR), Large, Matthew9 (AUTHOR), Maruccio, Giuseppe6 (AUTHOR), Menichelli, Mauro1 (AUTHOR), Monteduro, Anna Grazia6 (AUTHOR), Moscatelli, Francesco1,10 (AUTHOR)
Source: Nanomaterials (2079-4991). Oct2022, Vol. 12 Issue 19, p3466. 14p.
Subjects: Amorphous silicon, Photoemission, Soft X rays, Neutron sources, Hydrogenated amorphous silicon, Atomic force microscopy, Nuclear counters, X-ray absorption
Abstract: In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). This investigation will be performed by mean of high-resolution photoemission, soft X-Ray absorption and atomic force microscopy. Due to dangling bonds, the amorphous silicon is a highly defective material. However, by hydrogenation it is possible to reduce the density of the defect by several orders of magnitude, using hydrogenation and this will allow its usage in radiation detector devices. The investigation of the damage induced by exposure to high energy irradiation and its microscopic origin is fundamental since the amount of defects determine the electronic properties of the a-Si:H. The comparison of the spectroscopic results on bare and irradiated samples shows an increased degree of disorder and a strong reduction of the Si-H bonds after irradiation. After annealing we observe a partial recovering of the Si-H bonds, reducing the disorder in the Si (possibly due to the lowering of the radiation-induced dangling bonds). Moreover, effects in the uppermost coating are also observed by spectroscopies. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices.
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  Data: <searchLink fieldCode="AR" term="%22Peverini%2C+Francesca%22">Peverini, Francesca</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> francesca.peverini@studenti.unipg.it</i><br /><searchLink fieldCode="AR" term="%22Bizzarri%2C+Marco%22">Bizzarri, Marco</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Boscardin%2C+Maurizio%22">Boscardin, Maurizio</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Calcagnile%2C+Lucio%22">Calcagnile, Lucio</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Caprai%2C+Mirco%22">Caprai, Mirco</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Caricato%2C+Anna+Paola%22">Caricato, Anna Paola</searchLink><relatesTo>6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cirrone%2C+Giuseppe+Antonio+Pablo%22">Cirrone, Giuseppe Antonio Pablo</searchLink><relatesTo>7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Crivellari%2C+Michele%22">Crivellari, Michele</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cuttone%2C+Giacomo%22">Cuttone, Giacomo</searchLink><relatesTo>7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dunand%2C+Sylvain%22">Dunand, Sylvain</searchLink><relatesTo>8</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fanò%2C+Livio%22">Fanò, Livio</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gianfelici%2C+Benedetta%22">Gianfelici, Benedetta</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hammad%2C+Omar%22">Hammad, Omar</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ionica%2C+Maria%22">Ionica, Maria</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kanxheri%2C+Keida%22">Kanxheri, Keida</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Large%2C+Matthew%22">Large, Matthew</searchLink><relatesTo>9</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Maruccio%2C+Giuseppe%22">Maruccio, Giuseppe</searchLink><relatesTo>6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Menichelli%2C+Mauro%22">Menichelli, Mauro</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Monteduro%2C+Anna+Grazia%22">Monteduro, Anna Grazia</searchLink><relatesTo>6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Moscatelli%2C+Francesco%22">Moscatelli, Francesco</searchLink><relatesTo>1,10</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Oct2022, Vol. 12 Issue 19, p3466. 14p.
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– Name: Abstract
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  Data: In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). This investigation will be performed by mean of high-resolution photoemission, soft X-Ray absorption and atomic force microscopy. Due to dangling bonds, the amorphous silicon is a highly defective material. However, by hydrogenation it is possible to reduce the density of the defect by several orders of magnitude, using hydrogenation and this will allow its usage in radiation detector devices. The investigation of the damage induced by exposure to high energy irradiation and its microscopic origin is fundamental since the amount of defects determine the electronic properties of the a-Si:H. The comparison of the spectroscopic results on bare and irradiated samples shows an increased degree of disorder and a strong reduction of the Si-H bonds after irradiation. After annealing we observe a partial recovering of the Si-H bonds, reducing the disorder in the Si (possibly due to the lowering of the radiation-induced dangling bonds). Moreover, effects in the uppermost coating are also observed by spectroscopies. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano12193466
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      – Code: eng
        Text: English
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        PageCount: 14
        StartPage: 3466
    Subjects:
      – SubjectFull: Amorphous silicon
        Type: general
      – SubjectFull: Photoemission
        Type: general
      – SubjectFull: Soft X rays
        Type: general
      – SubjectFull: Neutron sources
        Type: general
      – SubjectFull: Hydrogenated amorphous silicon
        Type: general
      – SubjectFull: Atomic force microscopy
        Type: general
      – SubjectFull: Nuclear counters
        Type: general
      – SubjectFull: X-ray absorption
        Type: general
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      – TitleFull: High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices.
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