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Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices.

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Title: Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices.
Authors: Koveshnikov, Sergei1 (AUTHOR) skoveshnikov@iptm.ru, Kononenko, Oleg1 (AUTHOR), Soltanovich, Oleg1 (AUTHOR), Kapitanova, Olesya2 (AUTHOR), Knyazev, Maxim1 (AUTHOR), Volkov, Vladimir1 (AUTHOR), Yakimov, Eugene1 (AUTHOR)
Source: Nanomaterials (2079-4991). Oct2022, Vol. 12 Issue 20, p3626-N.PAG. 12p.
Subjects: Computer storage devices, Graphene, Capacitance-voltage characteristics, Oxide coating, Raman spectroscopy
Abstract: Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching. The operative mechanisms that are responsible for resistive switching are being intensively investigated, and three models explaining the change in the resistive states have been developed. These models are grounded in the metallic-like filamentary conduction, contact resistance modification and the oxidation of/reduction in the graphene oxide bulk. In this work, using Al/GO/n-Si structures, we demonstrate that all three of these operative mechanisms can simultaneously participate in the resistive switching of graphene oxide. Multiple point-like conduction channels in the graphene oxide films were detected by the electron beam-induced current (EBIC) technique. At the same time, large areas with increased conductivity were also revealed by EBIC. An analysis of these areas by Raman spectroscopy indicates the change in the graphene oxide bulk's resistive properties. The EBIC data along with the measurements of the capacitance–voltage characteristics provided strong evidence of the involvement of an aluminum/graphene oxide interface in the switching processes. In addition, by using Al/GO/n-Si structures, we were able to identify unique local properties of the formed conductive channels, namely the change of the charge state of a conductive channel due to the creation of negatively charged traps and/or an increase in the GO work function. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices.
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  Data: <searchLink fieldCode="AR" term="%22Koveshnikov%2C+Sergei%22">Koveshnikov, Sergei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> skoveshnikov@iptm.ru</i><br /><searchLink fieldCode="AR" term="%22Kononenko%2C+Oleg%22">Kononenko, Oleg</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Soltanovich%2C+Oleg%22">Soltanovich, Oleg</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kapitanova%2C+Olesya%22">Kapitanova, Olesya</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Knyazev%2C+Maxim%22">Knyazev, Maxim</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Volkov%2C+Vladimir%22">Volkov, Vladimir</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yakimov%2C+Eugene%22">Yakimov, Eugene</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Oct2022, Vol. 12 Issue 20, p3626-N.PAG. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Computer+storage+devices%22">Computer storage devices</searchLink><br /><searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink><br /><searchLink fieldCode="DE" term="%22Capacitance-voltage+characteristics%22">Capacitance-voltage characteristics</searchLink><br /><searchLink fieldCode="DE" term="%22Oxide+coating%22">Oxide coating</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink>
– Name: Abstract
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  Data: Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching. The operative mechanisms that are responsible for resistive switching are being intensively investigated, and three models explaining the change in the resistive states have been developed. These models are grounded in the metallic-like filamentary conduction, contact resistance modification and the oxidation of/reduction in the graphene oxide bulk. In this work, using Al/GO/n-Si structures, we demonstrate that all three of these operative mechanisms can simultaneously participate in the resistive switching of graphene oxide. Multiple point-like conduction channels in the graphene oxide films were detected by the electron beam-induced current (EBIC) technique. At the same time, large areas with increased conductivity were also revealed by EBIC. An analysis of these areas by Raman spectroscopy indicates the change in the graphene oxide bulk's resistive properties. The EBIC data along with the measurements of the capacitance–voltage characteristics provided strong evidence of the involvement of an aluminum/graphene oxide interface in the switching processes. In addition, by using Al/GO/n-Si structures, we were able to identify unique local properties of the formed conductive channels, namely the change of the charge state of a conductive channel due to the creation of negatively charged traps and/or an increase in the GO work function. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano12203626
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        Text: English
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      – SubjectFull: Capacitance-voltage characteristics
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      – SubjectFull: Raman spectroscopy
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      – TitleFull: Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices.
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            NameFull: Koveshnikov, Sergei
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            NameFull: Knyazev, Maxim
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              Text: Oct2022
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