Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability. - Kim, Joon Pyo; Sim, Jaeho; Bidenko, Pavlo; Geum, Dae-Myeong; Kim, Seong Kwang; Shim, Joonsup; Kim, Jongmin; Kim, Sanghyeon (IEEE Electron Device Letters, 2022)