Tuning of charge carriers in Bi2Te3 thin films via swift heavy ion irradiation.
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| Title: | Tuning of charge carriers in Bi |
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| Authors: | Yadav, Jyoti1,2 (AUTHOR), Anoop, M. D.1 (AUTHOR), Yadav, Nisha1 (AUTHOR), Rao, N. Srinivasa1 (AUTHOR), Singh, Fouran2 (AUTHOR), Ichikawa, Takayuki3 (AUTHOR), Jain, Ankur4,5 (AUTHOR), Awasthi, Kamlendra1,6 (AUTHOR), Singh, Rini3 (AUTHOR) rini@hiroshima-u.ac.jp, Kumar, Manoj1 (AUTHOR) mkumar.phy@mnit.ac.in |
| Source: | Journal of Materials Science: Materials in Electronics. Jan2023, Vol. 34 Issue 3, p1-12. 12p. |
| Subjects: | Thin films, Irradiation, Heavy ions, X-ray photoelectron spectroscopy, Atomic force microscopy, Charge carriers, Surface roughness |
| Abstract: | The irradiation-induced effects of Ni7+ ion irradiation on the structural and electrical properties of e-beam evaporation synthesized Bi2Te3 thin films have been examined. X-ray Diffraction (XRD) results revealed that the films possessed a polycrystalline rhombohedral (R-3 m) crystal structure. No appreciable change was observed in lattice parameters a = b while c varied non-monotonically indicating an anisotropic variation of the unit cell under different ion fluences. X-ray peak profile analysis indicated a slight reduction in average crystallite size and an increase in lattice strain due to irradiation. Raman spectra of the films demonstrated the effect of irradiation on A 1 u 1 modes evolved from c-axis vibrations with ion fluence. The observed decrease in surface roughness through Atomic Force Microscopy (AFM) images up to 3 × 1012 ions/cm2 might be due to the formation of nanocrystallites with small sizes on the surface. The composition of the as-prepared thin films was found to be near stoichiometry of Bi2Te3 as revealed by X-ray Photoelectron Spectroscopy (XPS) analysis. The resistivity of films gets increased up to 3 × 1012 ions/cm2 as evident from the low-temperature transport measurements. The variation correlation of electrical resistivity with the Hall coefficient is examined as a function of ion fluence. The irradiation-induced crossover behavior is resulted in films with ion fluence from the n to p-type carriers. Interestingly, the bulk charge carriers are compensated with tunning of the Fermi level in ion-irradiated thin films. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | The irradiation-induced effects of Ni7+ ion irradiation on the structural and electrical properties of e-beam evaporation synthesized Bi2Te3 thin films have been examined. X-ray Diffraction (XRD) results revealed that the films possessed a polycrystalline rhombohedral (R-3 m) crystal structure. No appreciable change was observed in lattice parameters a = b while c varied non-monotonically indicating an anisotropic variation of the unit cell under different ion fluences. X-ray peak profile analysis indicated a slight reduction in average crystallite size and an increase in lattice strain due to irradiation. Raman spectra of the films demonstrated the effect of irradiation on A 1 u 1 modes evolved from c-axis vibrations with ion fluence. The observed decrease in surface roughness through Atomic Force Microscopy (AFM) images up to 3 × 1012 ions/cm2 might be due to the formation of nanocrystallites with small sizes on the surface. The composition of the as-prepared thin films was found to be near stoichiometry of Bi2Te3 as revealed by X-ray Photoelectron Spectroscopy (XPS) analysis. The resistivity of films gets increased up to 3 × 1012 ions/cm2 as evident from the low-temperature transport measurements. The variation correlation of electrical resistivity with the Hall coefficient is examined as a function of ion fluence. The irradiation-induced crossover behavior is resulted in films with ion fluence from the n to p-type carriers. Interestingly, the bulk charge carriers are compensated with tunning of the Fermi level in ion-irradiated thin films. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-022-09478-x |
