Tuning of charge carriers in Bi2Te3 thin films via swift heavy ion irradiation.
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| Title: | Tuning of charge carriers in Bi |
|---|---|
| Authors: | Yadav, Jyoti1,2 (AUTHOR), Anoop, M. D.1 (AUTHOR), Yadav, Nisha1 (AUTHOR), Rao, N. Srinivasa1 (AUTHOR), Singh, Fouran2 (AUTHOR), Ichikawa, Takayuki3 (AUTHOR), Jain, Ankur4,5 (AUTHOR), Awasthi, Kamlendra1,6 (AUTHOR), Singh, Rini3 (AUTHOR) rini@hiroshima-u.ac.jp, Kumar, Manoj1 (AUTHOR) mkumar.phy@mnit.ac.in |
| Source: | Journal of Materials Science: Materials in Electronics. Jan2023, Vol. 34 Issue 3, p1-12. 12p. |
| Subjects: | Thin films, Irradiation, Heavy ions, X-ray photoelectron spectroscopy, Atomic force microscopy, Charge carriers, Surface roughness |
| Abstract: | The irradiation-induced effects of Ni7+ ion irradiation on the structural and electrical properties of e-beam evaporation synthesized Bi2Te3 thin films have been examined. X-ray Diffraction (XRD) results revealed that the films possessed a polycrystalline rhombohedral (R-3 m) crystal structure. No appreciable change was observed in lattice parameters a = b while c varied non-monotonically indicating an anisotropic variation of the unit cell under different ion fluences. X-ray peak profile analysis indicated a slight reduction in average crystallite size and an increase in lattice strain due to irradiation. Raman spectra of the films demonstrated the effect of irradiation on A 1 u 1 modes evolved from c-axis vibrations with ion fluence. The observed decrease in surface roughness through Atomic Force Microscopy (AFM) images up to 3 × 1012 ions/cm2 might be due to the formation of nanocrystallites with small sizes on the surface. The composition of the as-prepared thin films was found to be near stoichiometry of Bi2Te3 as revealed by X-ray Photoelectron Spectroscopy (XPS) analysis. The resistivity of films gets increased up to 3 × 1012 ions/cm2 as evident from the low-temperature transport measurements. The variation correlation of electrical resistivity with the Hall coefficient is examined as a function of ion fluence. The irradiation-induced crossover behavior is resulted in films with ion fluence from the n to p-type carriers. Interestingly, the bulk charge carriers are compensated with tunning of the Fermi level in ion-irradiated thin films. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 161418773 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Tuning of charge carriers in Bi<subscript>2</subscript>Te<subscript>3</subscript> thin films via swift heavy ion irradiation. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Yadav%2C+Jyoti%22">Yadav, Jyoti</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Anoop%2C+M%2E+D%2E%22">Anoop, M. D.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yadav%2C+Nisha%22">Yadav, Nisha</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Rao%2C+N%2E+Srinivasa%22">Rao, N. Srinivasa</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Singh%2C+Fouran%22">Singh, Fouran</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ichikawa%2C+Takayuki%22">Ichikawa, Takayuki</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jain%2C+Ankur%22">Jain, Ankur</searchLink><relatesTo>4,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Awasthi%2C+Kamlendra%22">Awasthi, Kamlendra</searchLink><relatesTo>1,6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Singh%2C+Rini%22">Singh, Rini</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> rini@hiroshima-u.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Kumar%2C+Manoj%22">Kumar, Manoj</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> mkumar.phy@mnit.ac.in</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jan2023, Vol. 34 Issue 3, p1-12. 12p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Irradiation%22">Irradiation</searchLink><br /><searchLink fieldCode="DE" term="%22Heavy+ions%22">Heavy ions</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+force+microscopy%22">Atomic force microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carriers%22">Charge carriers</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+roughness%22">Surface roughness</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The irradiation-induced effects of Ni7+ ion irradiation on the structural and electrical properties of e-beam evaporation synthesized Bi2Te3 thin films have been examined. X-ray Diffraction (XRD) results revealed that the films possessed a polycrystalline rhombohedral (R-3 m) crystal structure. No appreciable change was observed in lattice parameters a = b while c varied non-monotonically indicating an anisotropic variation of the unit cell under different ion fluences. X-ray peak profile analysis indicated a slight reduction in average crystallite size and an increase in lattice strain due to irradiation. Raman spectra of the films demonstrated the effect of irradiation on A 1 u 1 modes evolved from c-axis vibrations with ion fluence. The observed decrease in surface roughness through Atomic Force Microscopy (AFM) images up to 3 × 1012 ions/cm2 might be due to the formation of nanocrystallites with small sizes on the surface. The composition of the as-prepared thin films was found to be near stoichiometry of Bi2Te3 as revealed by X-ray Photoelectron Spectroscopy (XPS) analysis. The resistivity of films gets increased up to 3 × 1012 ions/cm2 as evident from the low-temperature transport measurements. The variation correlation of electrical resistivity with the Hall coefficient is examined as a function of ion fluence. The irradiation-induced crossover behavior is resulted in films with ion fluence from the n to p-type carriers. Interestingly, the bulk charge carriers are compensated with tunning of the Fermi level in ion-irradiated thin films. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-022-09478-x Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 1 Subjects: – SubjectFull: Thin films Type: general – SubjectFull: Irradiation Type: general – SubjectFull: Heavy ions Type: general – SubjectFull: X-ray photoelectron spectroscopy Type: general – SubjectFull: Atomic force microscopy Type: general – SubjectFull: Charge carriers Type: general – SubjectFull: Surface roughness Type: general Titles: – TitleFull: Tuning of charge carriers in Bi2Te3 thin films via swift heavy ion irradiation. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Yadav, Jyoti – PersonEntity: Name: NameFull: Anoop, M. D. – PersonEntity: Name: NameFull: Yadav, Nisha – PersonEntity: Name: NameFull: Rao, N. Srinivasa – PersonEntity: Name: NameFull: Singh, Fouran – PersonEntity: Name: NameFull: Ichikawa, Takayuki – PersonEntity: Name: NameFull: Jain, Ankur – PersonEntity: Name: NameFull: Awasthi, Kamlendra – PersonEntity: Name: NameFull: Singh, Rini – PersonEntity: Name: NameFull: Kumar, Manoj IsPartOfRelationships: – BibEntity: Dates: – D: 20 M: 01 Text: Jan2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 34 – Type: issue Value: 3 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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