APA (7th ed.) Citation

Belafhaili, A., & Laanab, L. (2023). Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation. Journal of Materials Science: Materials in Electronics, 34(5), 1. https://doi.org/10.1007/s10854-022-09794-2

Chicago Style (17th ed.) Citation

Belafhaili, Amine, and Larbi Laanab. "Evolution of the Thermal Behavior and Complexity of End-of-range Defects in Silicon Pre-amorphized by Ge+ Implantation." Journal of Materials Science: Materials in Electronics 34, no. 5 (2023): 1. https://doi.org/10.1007/s10854-022-09794-2.

MLA (9th ed.) Citation

Belafhaili, Amine, and Larbi Laanab. "Evolution of the Thermal Behavior and Complexity of End-of-range Defects in Silicon Pre-amorphized by Ge+ Implantation." Journal of Materials Science: Materials in Electronics, vol. 34, no. 5, 2023, p. 1, https://doi.org/10.1007/s10854-022-09794-2.