Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation.
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| Title: | Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation. |
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| Authors: | Belafhaili, Amine1 (AUTHOR) a.belafhaili@um5r.ac.ma, Laanab, Larbi2 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. Feb2023, Vol. 34 Issue 5, p1-6. 6p. |
| Abstract: | In this work, we study the thermal behavior of end-of-range (EOR) defects formed in Ge+ (35 KeV, 1 × 1015 cm−2) pre-amorphized silicon at room temperature. Using low-temperature photoluminescence (PL) and transmission electron microscopy (TEM) in weak-beam dark-field (WBDF) mode, we show that, EOR defects, formed just beneath the former crystal to amorphous (c/a) interface, manifest several configurations depending on the thermal budget. For samples annealed at low thermal budget, PL measurements show that EOR defects consist only of various nano-self-interstitial clusters. However, during a middle annealing budget, there is appearance of {113} defects in addition to clusters. At a critical high thermal budget, the plan-view WBDF micrographs reveal that {113} defects are transformed into dislocation loops (DL). After that, as the annealing progresses, the different types of EOR defects grow in size, where their density decreases and their structure changes. This thermal behavior of EOR defects can be explained by the Ostwald ripening mechanism. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 161982068 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge<superscript>+</superscript> implantation. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Belafhaili%2C+Amine%22">Belafhaili, Amine</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> a.belafhaili@um5r.ac.ma</i><br /><searchLink fieldCode="AR" term="%22Laanab%2C+Larbi%22">Laanab, Larbi</searchLink><relatesTo>2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Feb2023, Vol. 34 Issue 5, p1-6. 6p. – Name: Abstract Label: Abstract Group: Ab Data: In this work, we study the thermal behavior of end-of-range (EOR) defects formed in Ge+ (35 KeV, 1 × 1015 cm−2) pre-amorphized silicon at room temperature. Using low-temperature photoluminescence (PL) and transmission electron microscopy (TEM) in weak-beam dark-field (WBDF) mode, we show that, EOR defects, formed just beneath the former crystal to amorphous (c/a) interface, manifest several configurations depending on the thermal budget. For samples annealed at low thermal budget, PL measurements show that EOR defects consist only of various nano-self-interstitial clusters. However, during a middle annealing budget, there is appearance of {113} defects in addition to clusters. At a critical high thermal budget, the plan-view WBDF micrographs reveal that {113} defects are transformed into dislocation loops (DL). After that, as the annealing progresses, the different types of EOR defects grow in size, where their density decreases and their structure changes. This thermal behavior of EOR defects can be explained by the Ostwald ripening mechanism. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-022-09794-2 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 1 Titles: – TitleFull: Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Belafhaili, Amine – PersonEntity: Name: NameFull: Laanab, Larbi IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 02 Text: Feb2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 34 – Type: issue Value: 5 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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