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Evaluation of the Dielectric Constant for Bi1.6Pb0.4Sr2Ca2Cu3-xZnxO Thin Film.

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Title: Evaluation of the Dielectric Constant for Bi1.6Pb0.4Sr2Ca2Cu3-xZnxO Thin Film.
Authors: Hermiz, Ghazala.Y.1 (AUTHOR) gyhermiz@yahoo.com, Shakouly, Suzan. M.2 (AUTHOR), Suhail, Mahdi. H.1 (AUTHOR)
Source: Journal of Superconductivity & Novel Magnetism. Feb2023, Vol. 36 Issue 2, p487-491. 5p.
Subjects: Permittivity, Thin films, Dielectric strength, Dielectric materials, Electric lines, Electrical resistivity
Abstract: For Bi1.6Pb0.4Sr2Ca2Cu3-xZnxO superconductor films, the dielectric constant value at x = 0, 0.2, 0.4, and 0.6 was obtained by building a theoretical relation between the dropping off voltage that scaled during the electrical resistivity measurements using four-point probe technique with dielectric constant. The results showed that the dielectric constant has an inverse relation with the voltage due to a film's ability to concentrate electric field lines across the BiPbSrCa layer. The increment of the Zn partial substitution in the Cu site revealed a dielectric constant value decrease with the voltage, which is noted at x = 0.4 and 0.6. This may relate to the pinholes increase in the BiPbSrCaCuZnO film that covers a range of defects in the film. The pinholes' existence in the films had a direct influence on the dielectric strength of BiPbSrCaCu material. The dielectric material's conductivity correlated to the hopping transition of the defect charge carriers and was strongly annealing temperature dependent. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Superconductivity & Novel Magnetism is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Evaluation of the Dielectric Constant for Bi<subscript>1.6</subscript>Pb<subscript>0.4</subscript>Sr<subscript>2</subscript>Ca<subscript>2</subscript>Cu<subscript>3-x</subscript>Zn<subscript>x</subscript>O Thin Film.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Superconductivity+%26+Novel+Magnetism%22">Journal of Superconductivity & Novel Magnetism</searchLink>. Feb2023, Vol. 36 Issue 2, p487-491. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Permittivity%22">Permittivity</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+strength%22">Dielectric strength</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+materials%22">Dielectric materials</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+lines%22">Electric lines</searchLink><br /><searchLink fieldCode="DE" term="%22Electrical+resistivity%22">Electrical resistivity</searchLink>
– Name: Abstract
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  Data: For Bi1.6Pb0.4Sr2Ca2Cu3-xZnxO superconductor films, the dielectric constant value at x = 0, 0.2, 0.4, and 0.6 was obtained by building a theoretical relation between the dropping off voltage that scaled during the electrical resistivity measurements using four-point probe technique with dielectric constant. The results showed that the dielectric constant has an inverse relation with the voltage due to a film's ability to concentrate electric field lines across the BiPbSrCa layer. The increment of the Zn partial substitution in the Cu site revealed a dielectric constant value decrease with the voltage, which is noted at x = 0.4 and 0.6. This may relate to the pinholes increase in the BiPbSrCaCuZnO film that covers a range of defects in the film. The pinholes' existence in the films had a direct influence on the dielectric strength of BiPbSrCaCu material. The dielectric material's conductivity correlated to the hopping transition of the defect charge carriers and was strongly annealing temperature dependent. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Superconductivity & Novel Magnetism is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1007/s10948-023-06495-7
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 487
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      – SubjectFull: Permittivity
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Dielectric strength
        Type: general
      – SubjectFull: Dielectric materials
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      – SubjectFull: Electric lines
        Type: general
      – SubjectFull: Electrical resistivity
        Type: general
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      – TitleFull: Evaluation of the Dielectric Constant for Bi1.6Pb0.4Sr2Ca2Cu3-xZnxO Thin Film.
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            NameFull: Hermiz, Ghazala.Y.
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            NameFull: Shakouly, Suzan. M.
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            NameFull: Suhail, Mahdi. H.
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            – D: 01
              M: 02
              Text: Feb2023
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              Y: 2023
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