Growth and Optimization of Extremely High-Pulse-Power Graded-Index Separate Confinement Heterostructure Quantum Well AlGaAs/InGaAs Diode Lasers with Broadened Waveguides.
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| Title: | Growth and Optimization of Extremely High-Pulse-Power Graded-Index Separate Confinement Heterostructure Quantum Well AlGaAs/InGaAs Diode Lasers with Broadened Waveguides. |
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| Authors: | Li, J. Z.1 jzli@sarnoff.com, Martinelli, R. U.1, Khalfin, V. B.1, Shellenbarger, Z.1, Braun, A. M.1, Capewell, D.1, Willner, B. I.1, Abeles, J. H.1 |
| Source: | Journal of Electronic Materials. Feb2005, Vol. 34 Issue 2, p156-160. 5p. 1 Diagram, 1 Chart, 5 Graphs. |
| Subjects: | Quantum wells, Lasers, Metallurgical analysis, Metal organic chemical vapor deposition, Vapor-plating, Photoluminescence, Secondary ion mass spectrometry |
| Abstract: | Material quality is an essential prerequisite and a major challenge for the fabrication of high-power, 980-nm, strained-quantum-well (SQW) InGaAs lasers. We report our work aimed at metal-organic chemical vapor deposition (MOCVD) growth optimization and epitaxial quality analysis of various graded-index separate confinement heterostructure (GRINSCH) QW AlGaAs/InGaAs laser structures. Systematic investigation of doping level control and minimization of oxygen incorporation in AlGaAs were performed. Background oxygen levels of 1015 cm-3 were obtained with n-(Si) and p-(C) doping concentrations as high as 1 x 1018 cm-3 and 3 x 1018 cm-3, respectively, for Al0.4Ga0.6As layers. Double-crystal x-ray (DCXR), room-temperature photoluminescence (PL) mapping, Hall effect measurements, and secondary ion-mass spectroscopy (SIMS) techniques were used to evaluate material quality. A record, multimode, pulsed output power of 52.1 W has been obtained from 100-µm X 2-mm broad-stripe lasers made from these materials. The devices demonstrate low threshold current, low cavity losses, and kink-free light-current characteristics. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 16240155 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Growth and Optimization of Extremely High-Pulse-Power Graded-Index Separate Confinement Heterostructure Quantum Well AlGaAs/InGaAs Diode Lasers with Broadened Waveguides. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Li%2C+J%2E+Z%2E%22">Li, J. Z.</searchLink><relatesTo>1</relatesTo><i> jzli@sarnoff.com</i><br /><searchLink fieldCode="AR" term="%22Martinelli%2C+R%2E+U%2E%22">Martinelli, R. U.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Khalfin%2C+V%2E+B%2E%22">Khalfin, V. B.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Shellenbarger%2C+Z%2E%22">Shellenbarger, Z.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Braun%2C+A%2E+M%2E%22">Braun, A. M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Capewell%2C+D%2E%22">Capewell, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Willner%2C+B%2E+I%2E%22">Willner, B. I.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Abeles%2C+J%2E+H%2E%22">Abeles, J. H.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Feb2005, Vol. 34 Issue 2, p156-160. 5p. 1 Diagram, 1 Chart, 5 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Quantum+wells%22">Quantum wells</searchLink><br /><searchLink fieldCode="DE" term="%22Lasers%22">Lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Metallurgical+analysis%22">Metallurgical analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+organic+chemical+vapor+deposition%22">Metal organic chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Vapor-plating%22">Vapor-plating</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Secondary+ion+mass+spectrometry%22">Secondary ion mass spectrometry</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Material quality is an essential prerequisite and a major challenge for the fabrication of high-power, 980-nm, strained-quantum-well (SQW) InGaAs lasers. We report our work aimed at metal-organic chemical vapor deposition (MOCVD) growth optimization and epitaxial quality analysis of various graded-index separate confinement heterostructure (GRINSCH) QW AlGaAs/InGaAs laser structures. Systematic investigation of doping level control and minimization of oxygen incorporation in AlGaAs were performed. Background oxygen levels of 1015 cm-3 were obtained with n-(Si) and p-(C) doping concentrations as high as 1 x 1018 cm-3 and 3 x 1018 cm-3, respectively, for Al0.4Ga0.6As layers. Double-crystal x-ray (DCXR), room-temperature photoluminescence (PL) mapping, Hall effect measurements, and secondary ion-mass spectroscopy (SIMS) techniques were used to evaluate material quality. A record, multimode, pulsed output power of 52.1 W has been obtained from 100-µm X 2-mm broad-stripe lasers made from these materials. The devices demonstrate low threshold current, low cavity losses, and kink-free light-current characteristics. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-005-0227-x Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 156 Subjects: – SubjectFull: Quantum wells Type: general – SubjectFull: Lasers Type: general – SubjectFull: Metallurgical analysis Type: general – SubjectFull: Metal organic chemical vapor deposition Type: general – SubjectFull: Vapor-plating Type: general – SubjectFull: Photoluminescence Type: general – SubjectFull: Secondary ion mass spectrometry Type: general Titles: – TitleFull: Growth and Optimization of Extremely High-Pulse-Power Graded-Index Separate Confinement Heterostructure Quantum Well AlGaAs/InGaAs Diode Lasers with Broadened Waveguides. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Li, J. Z. – PersonEntity: Name: NameFull: Martinelli, R. U. – PersonEntity: Name: NameFull: Khalfin, V. B. – PersonEntity: Name: NameFull: Shellenbarger, Z. – PersonEntity: Name: NameFull: Braun, A. M. – PersonEntity: Name: NameFull: Capewell, D. – PersonEntity: Name: NameFull: Willner, B. I. – PersonEntity: Name: NameFull: Abeles, J. H. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 02 Text: Feb2005 Type: published Y: 2005 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 34 – Type: issue Value: 2 Titles: – TitleFull: Journal of Electronic Materials Type: main |
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