Ellipsometry study of optical properties and dielectric response of SnS2 and GaS crystals.
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| Title: | Ellipsometry study of optical properties and dielectric response of SnS |
|---|---|
| Authors: | Li, Fangxin1 (AUTHOR), Lian, Jie1,2 (AUTHOR) lianjie@sdu.edu.cn, Wei, Mingyang2 (AUTHOR) weimingyang@sdu.edu.cn, Wang, Yueming2 (AUTHOR), Xu, Zhen1 (AUTHOR), Zhou, Xiang'an1 (AUTHOR), Han, Yating2 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. Mar2023, Vol. 34 Issue 9, p1-9. 9p. |
| Subjects: | Optical properties, Dielectric properties, Ellipsometry, Raman spectroscopy, Crystals |
| Abstract: | In this paper, stannic sulfide(SnS2) and gallium sulfide (GaS) crystals were grown by the chemical vapor transmission (CVT) method. Correlation analysis of X-ray diffraction, X-ray photoelectron spectroscopy and Raman vibrational modes of the two materials proved the high quality and purity of the sample growth. The absorption characteristics of the two materials were measured by spectrophotometer, and it was found that SnS2 and GaS crystals had absorption peaks at 390 nm and 460 nm, respectively. The corresponding band gap was calculated by the Tauc diagram. In addition, the dielectric response and optical properties of SnS2 and GaS crystal at wavelengths from 250 to 1000 nm were investigated by using ellipsometry and first-principles calculations. Similar broad and low absorption bands of both materials were found in the visible and infrared regions, and a high extinction coefficient was found in the ultraviolet region, which facilitates their use as corresponding photodetectors. These results are helpful for the study of the physical properties of SnS2 and GaS crystals and their related applications. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 162587004 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Ellipsometry study of optical properties and dielectric response of SnS<subscript>2</subscript> and GaS crystals. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Li%2C+Fangxin%22">Li, Fangxin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lian%2C+Jie%22">Lian, Jie</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> lianjie@sdu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wei%2C+Mingyang%22">Wei, Mingyang</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> weimingyang@sdu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wang%2C+Yueming%22">Wang, Yueming</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xu%2C+Zhen%22">Xu, Zhen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhou%2C+Xiang'an%22">Zhou, Xiang'an</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Han%2C+Yating%22">Han, Yating</searchLink><relatesTo>2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Mar2023, Vol. 34 Issue 9, p1-9. 9p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+properties%22">Dielectric properties</searchLink><br /><searchLink fieldCode="DE" term="%22Ellipsometry%22">Ellipsometry</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Crystals%22">Crystals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this paper, stannic sulfide(SnS2) and gallium sulfide (GaS) crystals were grown by the chemical vapor transmission (CVT) method. Correlation analysis of X-ray diffraction, X-ray photoelectron spectroscopy and Raman vibrational modes of the two materials proved the high quality and purity of the sample growth. The absorption characteristics of the two materials were measured by spectrophotometer, and it was found that SnS2 and GaS crystals had absorption peaks at 390 nm and 460 nm, respectively. The corresponding band gap was calculated by the Tauc diagram. In addition, the dielectric response and optical properties of SnS2 and GaS crystal at wavelengths from 250 to 1000 nm were investigated by using ellipsometry and first-principles calculations. Similar broad and low absorption bands of both materials were found in the visible and infrared regions, and a high extinction coefficient was found in the ultraviolet region, which facilitates their use as corresponding photodetectors. These results are helpful for the study of the physical properties of SnS2 and GaS crystals and their related applications. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-023-10170-x Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 1 Subjects: – SubjectFull: Optical properties Type: general – SubjectFull: Dielectric properties Type: general – SubjectFull: Ellipsometry Type: general – SubjectFull: Raman spectroscopy Type: general – SubjectFull: Crystals Type: general Titles: – TitleFull: Ellipsometry study of optical properties and dielectric response of SnS2 and GaS crystals. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Li, Fangxin – PersonEntity: Name: NameFull: Lian, Jie – PersonEntity: Name: NameFull: Wei, Mingyang – PersonEntity: Name: NameFull: Wang, Yueming – PersonEntity: Name: NameFull: Xu, Zhen – PersonEntity: Name: NameFull: Zhou, Xiang'an – PersonEntity: Name: NameFull: Han, Yating IsPartOfRelationships: – BibEntity: Dates: – D: 20 M: 03 Text: Mar2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 34 – Type: issue Value: 9 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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