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Plasma-Assisted Atomic Layer Deposition of IrO 2 for Neuroelectronics.

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Title: Plasma-Assisted Atomic Layer Deposition of IrO 2 for Neuroelectronics.
Authors: Di Palma, Valerio1 (AUTHOR) valerio.dipalma@unimib.it, Pianalto, Andrea1 (AUTHOR), Perego, Michele2 (AUTHOR), Tallarida, Graziella2 (AUTHOR), Codegoni, Davide3 (AUTHOR), Fanciulli, Marco1 (AUTHOR) valerio.dipalma@unimib.it
Source: Nanomaterials (2079-4991). Mar2023, Vol. 13 Issue 6, p976. 15p.
Subjects: Atomic layer deposition, Charge injection, Action potentials, Bioelectronics, Electrochemical electrodes, Thin films
Abstract: In vitro and in vivo stimulation and recording of neuron action potential is currently achieved with microelectrode arrays, either in planar or 3D geometries, adopting different materials and strategies. IrO2 is a conductive oxide known for its excellent biocompatibility, good adhesion on different substrates, and charge injection capabilities higher than noble metals. Atomic layer deposition (ALD) allows excellent conformal growth, which can be exploited on 3D nanoelectrode arrays. In this work, we disclose the growth of nanocrystalline rutile IrO2 at T = 150 °C adopting a new plasma-assisted ALD (PA-ALD) process. The morphological, structural, physical, chemical, and electrochemical properties of the IrO2 thin films are reported. To the best of our knowledge, the electrochemical characterization of the electrode/electrolyte interface in terms of charge injection capacity, charge storage capacity, and double-layer capacitance for IrO2 grown by PA-ALD was not reported yet. IrO2 grown on PtSi reveals a double-layer capacitance (Cdl) above 300 µF∙cm−2, and a charge injection capacity of 0.22 ± 0.01 mC∙cm−2 for an electrode of 1.0 cm2, confirming IrO2 grown by PA-ALD as an excellent material for neuroelectronic applications. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Plasma-Assisted Atomic Layer Deposition of IrO 2 for Neuroelectronics.
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  Data: <searchLink fieldCode="AR" term="%22Di+Palma%2C+Valerio%22">Di Palma, Valerio</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> valerio.dipalma@unimib.it</i><br /><searchLink fieldCode="AR" term="%22Pianalto%2C+Andrea%22">Pianalto, Andrea</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Perego%2C+Michele%22">Perego, Michele</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tallarida%2C+Graziella%22">Tallarida, Graziella</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Codegoni%2C+Davide%22">Codegoni, Davide</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fanciulli%2C+Marco%22">Fanciulli, Marco</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> valerio.dipalma@unimib.it</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Mar2023, Vol. 13 Issue 6, p976. 15p.
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  Data: <searchLink fieldCode="DE" term="%22Atomic+layer+deposition%22">Atomic layer deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+injection%22">Charge injection</searchLink><br /><searchLink fieldCode="DE" term="%22Action+potentials%22">Action potentials</searchLink><br /><searchLink fieldCode="DE" term="%22Bioelectronics%22">Bioelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Electrochemical+electrodes%22">Electrochemical electrodes</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In vitro and in vivo stimulation and recording of neuron action potential is currently achieved with microelectrode arrays, either in planar or 3D geometries, adopting different materials and strategies. IrO2 is a conductive oxide known for its excellent biocompatibility, good adhesion on different substrates, and charge injection capabilities higher than noble metals. Atomic layer deposition (ALD) allows excellent conformal growth, which can be exploited on 3D nanoelectrode arrays. In this work, we disclose the growth of nanocrystalline rutile IrO2 at T = 150 °C adopting a new plasma-assisted ALD (PA-ALD) process. The morphological, structural, physical, chemical, and electrochemical properties of the IrO2 thin films are reported. To the best of our knowledge, the electrochemical characterization of the electrode/electrolyte interface in terms of charge injection capacity, charge storage capacity, and double-layer capacitance for IrO2 grown by PA-ALD was not reported yet. IrO2 grown on PtSi reveals a double-layer capacitance (Cdl) above 300 µF∙cm−2, and a charge injection capacity of 0.22 ± 0.01 mC∙cm−2 for an electrode of 1.0 cm2, confirming IrO2 grown by PA-ALD as an excellent material for neuroelectronic applications. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano13060976
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        Text: English
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        PageCount: 15
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      – SubjectFull: Atomic layer deposition
        Type: general
      – SubjectFull: Charge injection
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      – SubjectFull: Action potentials
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      – SubjectFull: Bioelectronics
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      – SubjectFull: Electrochemical electrodes
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      – SubjectFull: Thin films
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      – TitleFull: Plasma-Assisted Atomic Layer Deposition of IrO 2 for Neuroelectronics.
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            NameFull: Di Palma, Valerio
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              Text: Mar2023
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