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Velocity Overshoot Effects and Scaling Is sues in III--V Nitrides.

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Title: Velocity Overshoot Effects and Scaling Is sues in III--V Nitrides.
Authors: Singh, Madhusudan1, Yuh-Renn Wu1, Singh, Jasprit1
Source: IEEE Transactions on Electron Devices. Mar2005, Vol. 52 Issue 3, p311-316. 6p.
Subjects: Nitrides, Transistors, Semiconductors, Micrometers, Thickness measurement, Phonons
Abstract: Empirical evidence from submicrometer technology in GaAs- and InGaAs-based field-effect transistors (FETs) has led to an expectation that velocities exceeding the steady state values would be observed in 111-V nitride devices. However, scaling of devices down to 0.7 and 0.25 pm has so far not yielded any performance enhancement that may suggest an overshoot. In this paper, we examine transport in A1GaN-GaN heteroj unction FETs (HFETs) to examine whether velocity overshoot effects occur. Our findings show that very high scattering rates when combined with unusual field profiles, result in a change in the local transport mechanism, and, in the source-gate region, combine to reduce/nullify velocity overshoot effects. We also find that the effect of nonequilibrium phonons on transport in the channel is minimal, with the peak nonequilibrium phonon occupation being smaller than the equilibrium phonon occupation. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>. Mar2005, Vol. 52 Issue 3, p311-316. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Nitrides%22">Nitrides</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Micrometers%22">Micrometers</searchLink><br /><searchLink fieldCode="DE" term="%22Thickness+measurement%22">Thickness measurement</searchLink><br /><searchLink fieldCode="DE" term="%22Phonons%22">Phonons</searchLink>
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  Data: Empirical evidence from submicrometer technology in GaAs- and InGaAs-based field-effect transistors (FETs) has led to an expectation that velocities exceeding the steady state values would be observed in 111-V nitride devices. However, scaling of devices down to 0.7 and 0.25 pm has so far not yielded any performance enhancement that may suggest an overshoot. In this paper, we examine transport in A1GaN-GaN heteroj unction FETs (HFETs) to examine whether velocity overshoot effects occur. Our findings show that very high scattering rates when combined with unusual field profiles, result in a change in the local transport mechanism, and, in the source-gate region, combine to reduce/nullify velocity overshoot effects. We also find that the effect of nonequilibrium phonons on transport in the channel is minimal, with the peak nonequilibrium phonon occupation being smaller than the equilibrium phonon occupation. [ABSTRACT FROM AUTHOR]
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  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TED.2005.843966
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 311
    Subjects:
      – SubjectFull: Nitrides
        Type: general
      – SubjectFull: Transistors
        Type: general
      – SubjectFull: Semiconductors
        Type: general
      – SubjectFull: Micrometers
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      – SubjectFull: Thickness measurement
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      – SubjectFull: Phonons
        Type: general
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      – TitleFull: Velocity Overshoot Effects and Scaling Is sues in III--V Nitrides.
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              Text: Mar2005
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              Y: 2005
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