Prevention of Cu Electrolytic Migration Defects on RDL by a Cu-Selective Passivation to Enhance Reliability.
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| Title: | Prevention of Cu Electrolytic Migration Defects on RDL by a Cu-Selective Passivation to Enhance Reliability. |
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| Authors: | Salunke, Ashish S.1 ashishshivajisalunke@my.unt.edu, Alptekin, John1, Akula, Kaushik1, Jayakumar, Subiksha1, Kumar, Shaurya1, Chyan, Oliver1 |
| Source: | Journal of Microelectronic & Electronic Packaging. 2023, Vol. 20 Issue 1, p17-26. 10p. |
| Subjects: | Copper ions, Wafer level packaging, Electrodes, Electrochemical analysis, Dendritic crystals |
| Abstract: | Copper (Cu) is the metal of choice for the redistribution layer (RDL) to facilitate fast I/O communication in an integrated circuit (IC). Cu can electrochemically migrate (ECM) between the array of electrodes under bias, electrolyte, and moisture. IC packages fail miserably when exposed to various ion impurities and moisture. Copper at the anode dissolves to form Cu+1 and Cu+2 ions. As the anodic dissolution continues, the concentration of copper ion increases. These anions deposit on the cathode leading to Cu dendrite formation. To achieve the nearzero parts per billion defectivity goal, elimination of ECM defects in packaged devices is critical. This work discusses the development of a novel Cu-selective passivation and a method to accelerate reliability testing. A hydrophobic passivation with minimum stress to the IC package is proposed in this work. The new passivation coating is thermally stable, strongly adheres to Cu, is corrosion resistant, low cost, and shows good potential to prevent ECM defects. The coated packaged devices were tested by an accelerated PEG drop test (PDT) to explore its ECM prevention capabilities. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Microelectronic & Electronic Packaging is the property of International Microelectronics & Packaging Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 163747453 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Prevention of Cu Electrolytic Migration Defects on RDL by a Cu-Selective Passivation to Enhance Reliability. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Salunke%2C+Ashish+S%2E%22">Salunke, Ashish S.</searchLink><relatesTo>1</relatesTo><i> ashishshivajisalunke@my.unt.edu</i><br /><searchLink fieldCode="AR" term="%22Alptekin%2C+John%22">Alptekin, John</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Akula%2C+Kaushik%22">Akula, Kaushik</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jayakumar%2C+Subiksha%22">Jayakumar, Subiksha</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kumar%2C+Shaurya%22">Kumar, Shaurya</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chyan%2C+Oliver%22">Chyan, Oliver</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Microelectronic+%26+Electronic+Packaging%22">Journal of Microelectronic & Electronic Packaging</searchLink>. 2023, Vol. 20 Issue 1, p17-26. 10p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Copper+ions%22">Copper ions</searchLink><br /><searchLink fieldCode="DE" term="%22Wafer+level+packaging%22">Wafer level packaging</searchLink><br /><searchLink fieldCode="DE" term="%22Electrodes%22">Electrodes</searchLink><br /><searchLink fieldCode="DE" term="%22Electrochemical+analysis%22">Electrochemical analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Dendritic+crystals%22">Dendritic crystals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Copper (Cu) is the metal of choice for the redistribution layer (RDL) to facilitate fast I/O communication in an integrated circuit (IC). Cu can electrochemically migrate (ECM) between the array of electrodes under bias, electrolyte, and moisture. IC packages fail miserably when exposed to various ion impurities and moisture. Copper at the anode dissolves to form Cu+1 and Cu+2 ions. As the anodic dissolution continues, the concentration of copper ion increases. These anions deposit on the cathode leading to Cu dendrite formation. To achieve the nearzero parts per billion defectivity goal, elimination of ECM defects in packaged devices is critical. This work discusses the development of a novel Cu-selective passivation and a method to accelerate reliability testing. A hydrophobic passivation with minimum stress to the IC package is proposed in this work. The new passivation coating is thermally stable, strongly adheres to Cu, is corrosion resistant, low cost, and shows good potential to prevent ECM defects. The coated packaged devices were tested by an accelerated PEG drop test (PDT) to explore its ECM prevention capabilities. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Microelectronic & Electronic Packaging is the property of International Microelectronics & Packaging Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.4071/imaps.1903845 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 17 Subjects: – SubjectFull: Copper ions Type: general – SubjectFull: Wafer level packaging Type: general – SubjectFull: Electrodes Type: general – SubjectFull: Electrochemical analysis Type: general – SubjectFull: Dendritic crystals Type: general Titles: – TitleFull: Prevention of Cu Electrolytic Migration Defects on RDL by a Cu-Selective Passivation to Enhance Reliability. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Salunke, Ashish S. – PersonEntity: Name: NameFull: Alptekin, John – PersonEntity: Name: NameFull: Akula, Kaushik – PersonEntity: Name: NameFull: Jayakumar, Subiksha – PersonEntity: Name: NameFull: Kumar, Shaurya – PersonEntity: Name: NameFull: Chyan, Oliver IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: 2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 15514897 Numbering: – Type: volume Value: 20 – Type: issue Value: 1 Titles: – TitleFull: Journal of Microelectronic & Electronic Packaging Type: main |
| ResultId | 1 |
