Electrochemical Plating System Development of Nanotwinned Cu for Multiple WLP Features.
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| Title: | Electrochemical Plating System Development of Nanotwinned Cu for Multiple WLP Features. |
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| Authors: | Jianwen Han1 Jianwen.han@macdermidalpha.com, Pingping Ye1, Braye, Stephan1, Whitten, Kyle1, Cai Wang1, Shaffer, David1, Letize, Adam1 |
| Source: | Advancing Microelectronics. Sep/Oct2022, Vol. 49 Issue 5, p12-15. 4p. |
| Subjects: | Copper, Systems development, Wafer level packaging, Hybrid securities, Stainless steel |
| Abstract: | We developed a series of electrochemical plating (ECP) baths and processes to generate nanotwinned copper (nt-Cu) in wafer-level packaging (WLP) applications to fulfill the demand for copper-to-copper direct bonding and hybrid bonding. The system shows a high density of nt-Cu (close to 100%), controllable grain size (0.10 to 1.0 micron), vertical columnar structure (through the full height), and minimal transition layer between Cu seed and nt-Cu initial position (dozens of nanometers). In addition, the new process does not exhibit substrate-dependent preference. As a result, the process produces high-density nt-Cu films on copper and stainless steel substrates. The electrolyte components and ECP waveform are more critical parameters than others for controlling the nt-Cu performance. At the current stage, both within die (WID) and within feature (WIF) of ECP nt-Cu for WLP features tested can be lower than 5.0% with high density, columnar orientation, flat and less transition layer nt-Cu. [ABSTRACT FROM AUTHOR] |
| Copyright of Advancing Microelectronics is the property of International Microelectronics & Packaging Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 164103674 AccessLevel: 6 PubType: Periodical PubTypeId: serialPeriodical PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Electrochemical Plating System Development of Nanotwinned Cu for Multiple WLP Features. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Jianwen+Han%22">Jianwen Han</searchLink><relatesTo>1</relatesTo><i> Jianwen.han@macdermidalpha.com</i><br /><searchLink fieldCode="AR" term="%22Pingping+Ye%22">Pingping Ye</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Braye%2C+Stephan%22">Braye, Stephan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Whitten%2C+Kyle%22">Whitten, Kyle</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Cai+Wang%22">Cai Wang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Shaffer%2C+David%22">Shaffer, David</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Letize%2C+Adam%22">Letize, Adam</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Advancing+Microelectronics%22">Advancing Microelectronics</searchLink>. Sep/Oct2022, Vol. 49 Issue 5, p12-15. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Copper%22">Copper</searchLink><br /><searchLink fieldCode="DE" term="%22Systems+development%22">Systems development</searchLink><br /><searchLink fieldCode="DE" term="%22Wafer+level+packaging%22">Wafer level packaging</searchLink><br /><searchLink fieldCode="DE" term="%22Hybrid+securities%22">Hybrid securities</searchLink><br /><searchLink fieldCode="DE" term="%22Stainless+steel%22">Stainless steel</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: We developed a series of electrochemical plating (ECP) baths and processes to generate nanotwinned copper (nt-Cu) in wafer-level packaging (WLP) applications to fulfill the demand for copper-to-copper direct bonding and hybrid bonding. The system shows a high density of nt-Cu (close to 100%), controllable grain size (0.10 to 1.0 micron), vertical columnar structure (through the full height), and minimal transition layer between Cu seed and nt-Cu initial position (dozens of nanometers). In addition, the new process does not exhibit substrate-dependent preference. As a result, the process produces high-density nt-Cu films on copper and stainless steel substrates. The electrolyte components and ECP waveform are more critical parameters than others for controlling the nt-Cu performance. At the current stage, both within die (WID) and within feature (WIF) of ECP nt-Cu for WLP features tested can be lower than 5.0% with high density, columnar orientation, flat and less transition layer nt-Cu. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Advancing Microelectronics is the property of International Microelectronics & Packaging Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 12 Subjects: – SubjectFull: Copper Type: general – SubjectFull: Systems development Type: general – SubjectFull: Wafer level packaging Type: general – SubjectFull: Hybrid securities Type: general – SubjectFull: Stainless steel Type: general Titles: – TitleFull: Electrochemical Plating System Development of Nanotwinned Cu for Multiple WLP Features. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Jianwen Han – PersonEntity: Name: NameFull: Pingping Ye – PersonEntity: Name: NameFull: Braye, Stephan – PersonEntity: Name: NameFull: Whitten, Kyle – PersonEntity: Name: NameFull: Cai Wang – PersonEntity: Name: NameFull: Shaffer, David – PersonEntity: Name: NameFull: Letize, Adam IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: Sep/Oct2022 Type: published Y: 2022 Identifiers: – Type: issn-print Value: 23807008 Numbering: – Type: volume Value: 49 – Type: issue Value: 5 Titles: – TitleFull: Advancing Microelectronics Type: main |
| ResultId | 1 |
