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Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn3Sn thin films grown directly on sapphire (0001).

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Title: Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn3Sn thin films grown directly on sapphire (0001).
Authors: Upadhyay, Sneha1 (AUTHOR), Erickson, Tyler1 (AUTHOR), Hall, Hannah1 (AUTHOR), Shrestha, Ashok1 (AUTHOR), Ingram, David C.1 (AUTHOR), Sun, Kai2 (AUTHOR), Moreno Hernandez, Juan Carlos3 (AUTHOR), Hernandez Cocoletzi, Gregorio3 (AUTHOR), Takeuchi, Noboru4 (AUTHOR), Smith, Arthur R.1 (AUTHOR)
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2023, Vol. 41 Issue 4, p1-11. 11p.
Subjects: Molecular beam epitaxy, Reflection high energy electron diffraction, Thin films, Gallium nitride films, Scanning transmission electron microscopy, Crystal structure, Electron diffraction
Abstract: The Kagome antiferromagnet Mn 3 Sn has garnered much attention due to the presence of exciting properties such as anomalous Hall and Nernst effects. This paper discusses the synthesis of crystalline Mn 3 Sn thin films, prepared on Al 2 O 3 (0001) substrates at 453 ± 5 ° C using molecular beam epitaxy. The growth is monitored in situ using reflection high energy electron diffraction and measured ex situ using x-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. Our analysis shows the in-plane lattice constants of a 1 , M = 4.117 ± 0.027 Å and a 2 , M = 4.943 ± 0.033 Å, which is a very unexpected result when compared to the bulk a -plane Mn 3 Sn. This indicates a strain in the film and makes it challenging to provide a straightforward explanation. In an effort to explain our results, we discuss two possible orientation relationships between the Mn 3 Sn films and the sapphire substrates. Samples prepared under these conditions appear to have smooth surfaces locally, but overall the film has a 3D island morphology. First-principles calculations provide atomic models of the Mn 3 Sn (11 2 ¯ 0) lattice on Al 2 O 3 (0001) high symmetry sites, indicating that the L3-R90 ° is the most stable configuration. A detailed discussion of the experimental data and theoretical results, as well as strain effects, is provided. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:The Kagome antiferromagnet Mn 3 Sn has garnered much attention due to the presence of exciting properties such as anomalous Hall and Nernst effects. This paper discusses the synthesis of crystalline Mn 3 Sn thin films, prepared on Al 2 O 3 (0001) substrates at 453 ± 5 ° C using molecular beam epitaxy. The growth is monitored in situ using reflection high energy electron diffraction and measured ex situ using x-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. Our analysis shows the in-plane lattice constants of a 1 , M = 4.117 ± 0.027 Å and a 2 , M = 4.943 ± 0.033 Å, which is a very unexpected result when compared to the bulk a -plane Mn 3 Sn. This indicates a strain in the film and makes it challenging to provide a straightforward explanation. In an effort to explain our results, we discuss two possible orientation relationships between the Mn 3 Sn films and the sapphire substrates. Samples prepared under these conditions appear to have smooth surfaces locally, but overall the film has a 3D island morphology. First-principles calculations provide atomic models of the Mn 3 Sn (11 2 ¯ 0) lattice on Al 2 O 3 (0001) high symmetry sites, indicating that the L3-R90 ° is the most stable configuration. A detailed discussion of the experimental data and theoretical results, as well as strain effects, is provided. [ABSTRACT FROM AUTHOR]
ISSN:07342101
DOI:10.1116/6.0002535