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Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn3Sn thin films grown directly on sapphire (0001).

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Title: Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn3Sn thin films grown directly on sapphire (0001).
Authors: Upadhyay, Sneha1 (AUTHOR), Erickson, Tyler1 (AUTHOR), Hall, Hannah1 (AUTHOR), Shrestha, Ashok1 (AUTHOR), Ingram, David C.1 (AUTHOR), Sun, Kai2 (AUTHOR), Moreno Hernandez, Juan Carlos3 (AUTHOR), Hernandez Cocoletzi, Gregorio3 (AUTHOR), Takeuchi, Noboru4 (AUTHOR), Smith, Arthur R.1 (AUTHOR)
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2023, Vol. 41 Issue 4, p1-11. 11p.
Subjects: Molecular beam epitaxy, Reflection high energy electron diffraction, Thin films, Gallium nitride films, Scanning transmission electron microscopy, Crystal structure, Electron diffraction
Abstract: The Kagome antiferromagnet Mn 3 Sn has garnered much attention due to the presence of exciting properties such as anomalous Hall and Nernst effects. This paper discusses the synthesis of crystalline Mn 3 Sn thin films, prepared on Al 2 O 3 (0001) substrates at 453 ± 5 ° C using molecular beam epitaxy. The growth is monitored in situ using reflection high energy electron diffraction and measured ex situ using x-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. Our analysis shows the in-plane lattice constants of a 1 , M = 4.117 ± 0.027 Å and a 2 , M = 4.943 ± 0.033 Å, which is a very unexpected result when compared to the bulk a -plane Mn 3 Sn. This indicates a strain in the film and makes it challenging to provide a straightforward explanation. In an effort to explain our results, we discuss two possible orientation relationships between the Mn 3 Sn films and the sapphire substrates. Samples prepared under these conditions appear to have smooth surfaces locally, but overall the film has a 3D island morphology. First-principles calculations provide atomic models of the Mn 3 Sn (11 2 ¯ 0) lattice on Al 2 O 3 (0001) high symmetry sites, indicating that the L3-R90 ° is the most stable configuration. A detailed discussion of the experimental data and theoretical results, as well as strain effects, is provided. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 164785033
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PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn<subscript>3</subscript>Sn thin films grown directly on sapphire (0001).
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Upadhyay%2C+Sneha%22">Upadhyay, Sneha</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Erickson%2C+Tyler%22">Erickson, Tyler</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hall%2C+Hannah%22">Hall, Hannah</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shrestha%2C+Ashok%22">Shrestha, Ashok</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ingram%2C+David+C%2E%22">Ingram, David C.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sun%2C+Kai%22">Sun, Kai</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Moreno+Hernandez%2C+Juan+Carlos%22">Moreno Hernandez, Juan Carlos</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hernandez+Cocoletzi%2C+Gregorio%22">Hernandez Cocoletzi, Gregorio</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Takeuchi%2C+Noboru%22">Takeuchi, Noboru</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Smith%2C+Arthur+R%2E%22">Smith, Arthur R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Jul2023, Vol. 41 Issue 4, p1-11. 11p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Reflection+high+energy+electron+diffraction%22">Reflection high energy electron diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+nitride+films%22">Gallium nitride films</searchLink><br /><searchLink fieldCode="DE" term="%22Scanning+transmission+electron+microscopy%22">Scanning transmission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+structure%22">Crystal structure</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+diffraction%22">Electron diffraction</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The Kagome antiferromagnet Mn 3 Sn has garnered much attention due to the presence of exciting properties such as anomalous Hall and Nernst effects. This paper discusses the synthesis of crystalline Mn 3 Sn thin films, prepared on Al 2 O 3 (0001) substrates at 453 ± 5 ° C using molecular beam epitaxy. The growth is monitored in situ using reflection high energy electron diffraction and measured ex situ using x-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. Our analysis shows the in-plane lattice constants of a 1 , M = 4.117 ± 0.027 Å and a 2 , M = 4.943 ± 0.033 Å, which is a very unexpected result when compared to the bulk a -plane Mn 3 Sn. This indicates a strain in the film and makes it challenging to provide a straightforward explanation. In an effort to explain our results, we discuss two possible orientation relationships between the Mn 3 Sn films and the sapphire substrates. Samples prepared under these conditions appear to have smooth surfaces locally, but overall the film has a 3D island morphology. First-principles calculations provide atomic models of the Mn 3 Sn (11 2 ¯ 0) lattice on Al 2 O 3 (0001) high symmetry sites, indicating that the L3-R90 ° is the most stable configuration. A detailed discussion of the experimental data and theoretical results, as well as strain effects, is provided. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1116/6.0002535
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 11
        StartPage: 1
    Subjects:
      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Reflection high energy electron diffraction
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Gallium nitride films
        Type: general
      – SubjectFull: Scanning transmission electron microscopy
        Type: general
      – SubjectFull: Crystal structure
        Type: general
      – SubjectFull: Electron diffraction
        Type: general
    Titles:
      – TitleFull: Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn3Sn thin films grown directly on sapphire (0001).
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Upadhyay, Sneha
      – PersonEntity:
          Name:
            NameFull: Erickson, Tyler
      – PersonEntity:
          Name:
            NameFull: Hall, Hannah
      – PersonEntity:
          Name:
            NameFull: Shrestha, Ashok
      – PersonEntity:
          Name:
            NameFull: Ingram, David C.
      – PersonEntity:
          Name:
            NameFull: Sun, Kai
      – PersonEntity:
          Name:
            NameFull: Moreno Hernandez, Juan Carlos
      – PersonEntity:
          Name:
            NameFull: Hernandez Cocoletzi, Gregorio
      – PersonEntity:
          Name:
            NameFull: Takeuchi, Noboru
      – PersonEntity:
          Name:
            NameFull: Smith, Arthur R.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul2023
              Type: published
              Y: 2023
          Identifiers:
            – Type: issn-print
              Value: 07342101
          Numbering:
            – Type: volume
              Value: 41
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
              Type: main
ResultId 1